Properties and estimated parameters of a submicrometer HSDMAGFET

• Autorzy: Kordalski W. , Boratyński B. , Panek M.
• Języki publikacji: EN

Abstrakty

EN

Main features and predicted values of key parameters of a novel magnetic field sensitive semiconductor device, horizontally-split-drain magnetic field sensitive field effect transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields have been presented. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and the gradual channel detachment effect (GCDE). The predicted relative sensitivity of the sensor can reach as high value as 100 [%/T]. Furthermore, due to its original structure, the spatial resolution of the MAGFET is extremely high, which makes this device particularly useful in reading magnetically encoded data or magnetic pattern recognition. Besides, a novel device related to the HSDMAGFET, namely, horizontally-split-drain current controlled field effect transistor (HSDCCFET) has been presented.

Słowa kluczowe

EN

magnetic field effect transistor; MAGFET; magnetic field measurement; magnetic pattern; recognition

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 33--43
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Kordalski W.

autor

Boratyński B.

autor

Panek M.

• Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, ul. Narutowicza 11/12, 80-952 Gdańsk, Poland

Bibliografia

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