A new drain insulation design in GaAs SD-MAGFET

• Autorzy: Boratyński B. , Kordalski W. , Ściana B. , Panek M. , Zborowska-Lindert I.
• Języki publikacji: EN

Abstrakty

EN

A new design of a split-drain MAGFET type magnetic sensor based on GaAs MESFET device with a sandwich-like drain configuration has been investigated. An excellent performance of the sensor, namely its high sensitivity and spatial resolution to magnetic field could be obtained as a result of an extremely short (200 nm) distance between the transistor drains realized using a unique epitaxial layer structure. A proper sequence of the AlGaAs/GaAs/AlAs/GaAs epitaxial layers grown by MOCVD technique followed by selective etching process has been proposed and realized. Structural parameters of the layers were studied. Electrical performance of the insulated drain structure was evaluated by measurements of the leakage current that was less than 10 nA for 2 V drain voltage bias difference.

Słowa kluczowe

EN

MAGFET; GaAs MESFET; epitaxial growth

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 27--21
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Boratyński B.

autor

Kordalski W.

autor

Ściana B.

autor

Panek M.

autor

Zborowska-Lindert I.

• Faculty of Microsystems Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-370 Wrocław

Bibliografia

• [1] BALTES H., POPOVIC R., Integrated Semiconductor Magnetic Field Sensor, Proc. IEEE, 74 (1986), 1107.
• [2] SUGIYAMA Y., SOGA H., TACANO M., BALTES H., IEEE Trans. Electron Dev., 36 (1989),1639.
• [3] KORDALSKI W., BORATYŃSKI B., ZBOROWSKA-LINDERT I., PANEK M., ŚCIANA B., TŁACZAŁA M., MAGFET-type magnetic field sensor, Patent Application: PL 381793 of 20 Feb. 2007.