CMOS evolution. Development limits

• Autorzy: Jakubowski A. , Łukasiak L.
• Języki publikacji: EN

Abstrakty

EN

Evolution of complementary metal oxide semiconductor (CMOS) technology is presented from the very first MOS transistors to state-of-the-art structures. Difficulties of scaling are discussed together with ways to overcome them. New options for silicon microelectronics (SOI technology and strain engineering) are described. Finally, fundamental limitations to progress in semiconductor devices are considered.

Słowa kluczowe

EN

CMOS; scaling; silicon microelectronics; silicon-on-insulator; SOI; strained silicon

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 5--20
• Opis fizyczny: Bibliogr. 34 poz.

Twórcy

autor

Jakubowski A.

autor

Łukasiak L.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

Bibliografia

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