Electronic properties of LaNiIn doped with hydrogen

• Autorzy: Wasylkowicz Ł. , Jezierski A. , Szytuła A. , Penc B.
• Konferencja: New Materials for Magnetoelectronics MAG-EL-MAT 2007, Będlewo near Poznań, 7-10 May 2007
• Języki publikacji: EN

Abstrakty

EN

Electronic properties of RNiInH (R = La,Ce,Nd) intermetallic hydrides were recently studied both experimentally and theoretically. In the present work, we study the influence of hydrogen on the electronic structure of LaNiIn. The electronic structure is calculated by Augmented Spin Wave (ASW) and Tight Binding Linear Muffin Tin Orbital methods within the spin density approximation. The doped hydrogen atoms modify the band structure near the Fermi level. The density of states at the Fermi level decreases with increasing hydrogen concentration but the compounds have metallic character.

Słowa kluczowe

EN

hydrides; electronic structure; LaNiIn hydride; LMTO; ASW

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 4
• Strony: 1229--1234
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Wasylkowicz Ł.

autor

Jezierski A.

autor

Szytuła A.

autor

Penc B.

• Faculty of Technical University, Poznań University of Technology, Nieszawska 17, 60-965 Poznań, Poland

Bibliografia

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