Nanocluster memories by ion beam synthesis of Si in SiO2

• Autorzy: Schmidt B. , Heinig K. H. , Röntzsch L. , Stegemann K. H.
• Konferencja: II Workshop "Hybrid Nanostructured Materials,Synthesis, Properties, Applications" Dresden, Germany 8-9 November, 2006
• Języki publikacji: EN

Abstrakty

EN

Ion implantation and ion irradiation induced interface mixing were used to synthesise silicon nanoclusters in the gate oxide of metal-oxide-semiconductor (MOS) structures aiming at electronic memory applications. In the present study silicon nanocrystals for multi-dot floating-gate memories produced by ion irradiation through SiO2/Si nterfaces have been investigated to demonstrate possible advantages of this approach compared to conventional application of ion beam synthesis to the fabrication of silicon nanocrystal memories. The memory properties of the fabricated structures as a function of Si+-irradiation dose and post-irradiation annealing temperature and time have been examined through electrical measurements on n-channel MOS field-effect transistors. Low-voltage operating devices that can endure more than 106 programming/erasing cycles have been successfully achieved. More research is still required to improve charge retention and ensure the standard 10-year retention time needed for true non-volatile memory applications.

Słowa kluczowe

EN

ion beam synthesis; silicon nanocrystal; nonvolatile memories

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 4
• Strony: 1213--1222
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Schmidt B.

autor

Heinig K. H.

autor

Röntzsch L.

autor

Stegemann K. H.

• Research Center Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany

Bibliografia

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