Computer simulation and optimization of properties of porous low-k dielectrics

• Autorzy: Elsner A. , Hermann H.
• Konferencja: II Workshop "Hybrid Nanostructured Materials,Synthesis, Properties, Applications" Dresden, Germany 8-9 November, 2006
• Języki publikacji: EN

Abstrakty

EN

Due to progressive miniaturization one of the current challenges in microelectronics is to find materials with very low electric permittivity. The model of dense random packed spheres is applied to generate model systems of porous dielectric materials. Pores are represented by dense packed spheres. By optimizing the parameters, the porosity and therefore the theoretical electric permittivity was reduced significantly. Another task is optimization of mechanical properties. Mechanical stability is an important criterion for the processability in industrial fabrication of microlectronics components. The mechanical stability is mostly negatively correlated to porosity. Simulated open pore and closed pore systems with high porosity were analyzed in terms of mechanical properties. Other methods like an adapted random walk algorithm were used to characterize further important properties like particle permeability. In porous materials, the so-called "random voiding" may appear. This happens when pores are larger than the layer thickness. Simulation of porous structures can show limitations in pore size and spatial distribution where the requirements of industrial processability are no longer satisfied. Advantageous parameters for porosity in dielectric materials are advised.

Słowa kluczowe

EN

porous structure; low-k dielectrics; computer simulation; dense random sphere packings

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 4
• Strony: 1193--1202
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Elsner A.

autor

Hermann H.

• Institute for Solid State and Materials Research, IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

Bibliografia

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