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Tytuł artykułu

Investigations of electrical properties of Eu- and Pd-doped titanium dioxide thin films on silicon

Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this work, investigations of electrical properties of Eu- and Pd-doped TiO2 thin films have been outlined. Thin films were deposited by low pressure hot target reactive magnetron sputtering from metallic Ti-Eu-Pd mosaic target on conventional silicon wafers. For electrical characterization of prepared thin films both temperature dependent resistivity and current to voltage (I-V) characteristics have been examined. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix modified its properties to obtain n-type oxide-semiconductor which is electrically and optically active at room temperature. Additionally from I-V measurements the formation of heterojunction at the interface of thin film-silicon was confirmed.
Czasopismo
Rocznik
Strony
133--137
Opis fizyczny
Bibliogr. 11 poz.,
Twórcy
autor
autor
  • Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw, Poland
Bibliografia
  • [1] Tonooka K., Bando H., Aiura Y., Photovoltaic effect observed in transparent p-n heterojunctions based oh oxide semiconductors, Thin Solid Films 445(2), 2003, pp. 327—31.
  • [2] O'Regan B., Gratzel M., A low-cost, high-efficiency solar cell based on dye-sensitized colloidal Ti02 films, Nature 353, 1991, pp. 737-40.
  • [3] Carcia P.F., McLean R.S., Transparent Oxide Semiconductor Thin Films Transistors, PCT U.S. Patent WO 2004/034449 A2, April 22, 2004.
  • [4] Domaradzki J., Kaczmarek D., Borkowska A., Wocyrz M., Paszkiewicz B., Electrical properties of nanocrystalline HfTi04 gate insulator, Physica Status Solidi (a) 203(9), 2006, pp. 2215-8.
  • [5] Domaradzki J., Borkowska A., Kaczmarek D., Proci6w E., Transparent oxide semiconductors based on Ti02 doped with V, Co and Pd elements, Journal of Non-Crystalline Solids 352(23-25), 2006, pp. 2324-7.
  • [6] Prociow E., Domaradzki J., Kaczmarek D., Investigations of structural and electronic properties of Ti02-doped layers deposited by hot target reactive magnetron sputtering method, IV International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'02, Slovakia, IEEE 02EX531, 2002, pp. 51-4.
  • [7] Domaradzki J., Structural, optical and electrical properties of transparent V and Pd-doped Ti02 thin films prepared by sputtering, Thin Solid Films 497(1-2), 2006, pp. 243-8.
  • [8] Kudrawiec R., Podhorodecki A., Mirowska N., Misiewicz J., Molchan I.S., Gaponenko N.V., Lutich A.A., Gaponenko S.V., Photoluminescence investigation of europium-doped alumina, titania and indium sol-gel derivedfilms in porous anodic alumina, Material Science and Engineering B 105(1-3), 2003, pp. 53-6.
  • [9] Podhorodecki A., Kudrawiec R., Misiewicz J., Gaponenko N.V., Tsyrkunow D., 1.54 pm photoluminescence from Er-doped sol—gel derived In203films embedded in porous anodic alumina. Optical Materials 28(6-7), 2006, pp. 685-7.
  • [10] Domaradzki J., Kaczmarek D., Prociow E.L., Borkowska A., Kudrawiec R., Misiewicz J., Schmeisser D., Beuckert G., Characterization of nanocrystalline Ti02 - Hf02 thin films prepared by low pressure hot target reactive magnetron sputtering, Surface and Coatings Technology 200(22-23), 2006, pp. 6283-7.
  • [11] Berlicki T., Thermal vacuum sensor with compensation of heat transfer, Sensors and Actuators A: Physical 93(1), 2001, pp. 27-32.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0007-0115
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