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In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quantum wells (MQWs). Firstly, comparing the measured spectra of MOKE with the theoretical ones we established parameters of the sample such as energy of excitons in quantum wells, their oscillation strengths, damping coefficients. Then using the obtained parameters we tried to establish which quantum well from the 30 quantum wells existing in the sample is the most responsible for the value of rotation of polarization plane of light in measured MOKE. Finally we analysed how the geometry of the structure influences the value of the rotation. We changed the widths of all barriers between the wells of MWQs while the other parameters remained unchanged. It occurred that the rotation of polarization plane changed periodically. A big enhancement of MOKE can be obtained for certain widths of barriers. It confirms that the interference plays a crucial role in the MOKE.
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Czasopismo
Rocznik
Tom
Strony
107--115
Opis fizyczny
Bibliogr. 14 poz.,
Twórcy
autor
autor
autor
autor
autor
- Wroclaw University of Technology, Wub. Wyspianskiego 27, 50-370 Wroclaw, Poland
Bibliografia
- [1] Bożym J., Dudziak E., Pruchnik D., Wasilewski Z.R., Optical Properties of Semiconductor Nanostructures, [Eds.] M.L. Sadowski et al., Kluwer Academic Publishers, Netherlands 2000, pp. 65-70.
- [2] Chen Z., Bratschitsch R., Cundiff S.T., Interference effects in transient Kerr spectra of a semiconductor multilayer structure. Optics Letters 30(17), 2005, pp. 2320-2.
- [3] Qiu Z.Q., Bader S.D., Surface magneto-optic Kerr effect, Review of Scientific Instruments 71(3), 2000, pp. 1243-55.
- [4] Suits J.C., Magneto-optical rotation and ellipticity measurements with a spinning analyzer, The Review of Scientific Instruments 42(1), 1971, pp. 19-22.
- [5] Hass G., Physics of Thin Films, Vol. I, Academic Press, New York, London 1963.
- [6] Sprokel G.J., Reflectivity, rotation, and ellipticity of magnetooptic film structures. Applied Optics 23(22), 1984, pp. 3983-9.
- [7] Mitsas C.L., Siapkas D.I., Generalized matrix method for analysis of coherent and incoherent reflectance and transmittance of multilayer structures with rough surfaces, interfaces, and finite substrates, Applied Optics 34(10), 1995, pp. 1678-83.
- [8] Testelin C, Rigaux C., Cibert J., Resonant magneto-optic Kerr effect in CdTe/Cdl_xMnxTe quantum-well structures, Physical Review B 55(4), 1997, pp. 2360-7.
- [9] Sell D.D., Casey H.C. Jr, Wecht K.W., Concentration dependence of the refractive index for n- andp-type GaAs between 1.2 and 1.8 eV, Journal of Applied Physics 45(6), 1974, pp. 2650-7.
- [10] Sturge M.D., Optical absorption of gallium arsenide between 0.6 and 2.75 eV, Physical Review 127(3), 1962, pp. 768-73.
- [11] Sell D.D., Casey H.C. Jr, Optical absorption and photoluminescence studies of thin GaAs layers in GaAsAlfiOj^s double heterostructures, Journal of Applied Physics 45(2), 1974, pp. 800-7.
- [12] Fern R.E., Onton A., Refractive index of AlAs, Journal of Applied Physics 42(9), 1971, pp. 3499-500.
- [13] Casey H.C. Jr, Sell D.D., Panish M.B., Refractive index of AlxGai_xAs between 1.2 and 1.8 eV, Applied Physics Letters 24(2), 1974, pp. 63-5.
- [14] Blakemore J.S., Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics 53(10), 1982, pp. Rl 23-81.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0007-0112
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