Influence of post annealing on optical and structural properties of Eu and Pd-doped TiO2 thin films

• Autorzy: Domaradzki J. , Borkowska A. , Kaczmarek D. , Podhorodecki A. , Misiewicz J.
• Języki publikacji: EN

Abstrakty

EN

This work presents optical and structural characterization of europium and palladium doped titanium dioxide thin films prepared by modified magnetron sputtering. The metallic Eu and Pd dopants have been co-sputtered from a base Ti target (mosaic target) and deposited on SiO2 substrates. After the deposition samples were additionally annealed in air ambient for 2 hours at the temperatures of 200 °C, 400 °C, 600 °C and 800 °C, respectively. Structural properties of TiO2:(Eu, Pd) thin films were examined using X-ray diffraction (XRD). XRD patterns recorded after thermal treatment showed the dominating TiO2-rutile phase, independently of the temperature of annealing. Optical properties were studied as defined by optical transmission. It has been shown, that doping shifts the fundamental absorption edge of TiO2 toward the longer wavelength range. As the samples were additionally annealed the band gap widening has been observed from 1.7 eV, for as deposited sample up to 2.31 eV for those annealed at 800 °C.

Słowa kluczowe

EN

transparent oxide semiconductor; thin film; magnetron sputtering; titanium oxide; europium; palladium

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 1-2
• Strony: 51--56
• Opis fizyczny: Bibliogr. 14 poz.,

Twórcy

autor

Domaradzki J.

autor

Borkowska A.

autor

Kaczmarek D.

autor

Podhorodecki A.

autor

Misiewicz J.

• Wroclaw University of Technology Janiszewskiego 11/17, 50-372 Wrocław Poland

Bibliografia

• [1] Kamiya T., Hosono H., Electronic structures and device applications of transparent oxide conductors What is the real merit ofoXide semiconductors?,International Journala of Ceramic Technology 2(4), 2005, pp. 285-94.
• [2] Zakrzewska K., Brudnik A., Radecka M., Posadowski W., Reactively sputtered Ti02_x thin films with plasma-emission-controlled departure from stoichiometry, Thin Solid Films 343-344, 1999, pp. 152-5.
• [3] Berlicki T., Osadnik S., Prociów E., Thermal sensors with controlled sensitivity, Proceedings of XXIV International Conference IMAPS'OO, Rytro, Poland 2000, pp. 365-8.
• [4] Domaradzki J., Prociów E., Kaczmarek D., Berlicki T., Podhorodecki A., Kudrawiec R., Misiewicz }., X-ray, optical and electrical characterization of doped nanocrystalline titanium oxide thin films, Materials Science and Engineering B 109(1-3), 2004, pp. 249-51.
• [5] Domaradzki J., Structural, optical and electrical properties of transparent V and Pd-doped Ti02 thin films prepared by sputtering, Thin Solid Films 497(1-2), 2006, pp. 243-8.
• [6] Domaradzki J., Borkowska A., Kaczmarek D., Prociów E., Transparent oxide semiconductors based on Ti02 doped with V, Co and Pd elements, Journal of Non-Crystalline Solids 352(23-25), 2006, pp. 2324-7.
• [7] Palomino-Merino R., Conde-Gallardo A., García-Rocha M., Hernández-Calderón I., Castaño V., Rodríguez R., Photoluminescence of Ti02:Eu}+ thin films obtained by sol-gel on Si and Corning glass substrates, Thin Solid Films 401(1-2), 2001, pp. 118-23.
• [8] Peng A., Xie E., Jia Ch., Jiang R., Lin H., Photoluminescence properties ofTi02:Eu3+ thin films deposited on different substrates, Materials Letters 59(29-30), 2005, pp. 3866-9.
• [9] Zeng Q.G., Ding Z.J., Zhang Z.M., Synthesis, structure and optical properties of Eu3+Ti02 nanocrystals at room temperature, Journal of Luminescence 118(2), 2006, pp. 301-7.
• [10] Domaradzki J., Prociów E., Kaczmarek D., Berlicki T., The method of Ti02:Eu thin film fabrication, Polish Patent No P 379 365.
• [11] Domaradzki J., Kaczmarek D., Prociów E.L., Borkowska A., Kudrawiec R., Misiewicz J., Schmeisser D., Beuckert G., Characterization of nanocrystalline Ti02-Hf02 thin films prepared by low pressure hot target reactive magnetron sputtering, Surface and Coatings Technology 200(22-23), 2006, pp. 6283-7.
• [12] Domaradzki J., Kaczmarek D., Prociów E.L., Borkowska A., Schmeisser D., Beuckert G., Microstructure and optical properties ofTi02 thin films prepared by low pressure hot target reactive magnetron sputtering, Thin Solid Films 513(1-2), 2006, pp. 269-7'4.
• [13] Pal M., Tsujigami Y., Yoshikado A., Sakata H., Electrical and optical properties of Mo03-Te02 amorphous films prepared by PVD method, Physica Status Solidi A 182(2), 2000, pp. 727-36.
• [14] Tauc J., Grirorovici R., Vancu A., Optical properties and electronic structure of amorphous germanium, Physica Status Solidi B 15(2), 1966, pp. 627-37.