Phenomena responsible for energy dissipation in fine-grained PZT-type ceramics

• Autorzy: Zarycka A. , Bruś B. , Rymarczyk J. , Ilczuk J.
• Języki publikacji: EN

Abstrakty

EN

Description of the mechanisms responsible for the dissipation of energy in materials is possible thanks to the internal friction (IF) method - a non-destructive method thought to be one of the most sensitive ones [1-3]. The method is based on measurements of mechanical losses at various temperatures or various frequencies. The study of the IF of ferroelectrics can provide extensive information about the physics of processes within these materials, and about their domain structures and their interactions with various structural defects. The aim of the present study was to describe the mechanisms responsible for energy dissipation in PZT ceramics obtained by the sol-gel method and sintered by conventional ceramics sintering (CCS). This work presents results of investigations of the influence of PbTiO3 concentration in PZT ceramics on these processes.

Słowa kluczowe

EN

PZT; sol-gel method; internal friction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 3
• Strony: 801--808
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Zarycka A.

autor

Bruś B.

autor

Rymarczyk J.

autor

Ilczuk J.

• University of Silesia, Faculty of Computer Science and Materials Science, Department of Materials Science, ul. Żeromskiego 3, 41-200 Sosnowiec, Poland

Bibliografia

• [1] ZACHARIASZ R., ILCZUK J., CHROBAK A., Ceramics, 66 (2001), 710.
• [2] ZARYCKA A., ZACHARIASZ R., BRUŚ B., ILCZUK J., Mol. Quant. Acoust., 24 (2003), 255.
• [3] XU Y.H., Ferroelectric Materials and Their Applications, New York, North Holland, 1991, pp. 72–100.
• [4] SUROWIAK Z., KUPRYANOV M.F., CZEKAJ D., J. Eur. Ceram. Soc., 21 (2001), 1377.
• [5] YI C.H., CHIA C. W., CHENG C.L., CAO G.Z., SHEN I.Y., Sensors Act. A, 116 (2004), 369.
• [6] YAN F., CHEN X., BAO P., WANG Y., LIU J., J. Appl. Phys., 87 (2000), 1453.
• [7] ZACHARIASZ R., ILCZUK J., CHROBAK A., Ceramics, 66 (2001), 630.
• [8] BOUZID A., GABBAY M., FANTOZZI G., Mater. Sci. Eng, A 370 (2004), 123.
• [9] WANG C., FANG Q.F., SHI Y., ZHU Z.G., Mater. Res. Bull., 36 (2001), 2657.
• [10] BRUŚ B., ZACHARIASZ R., ILCZUK J., Phys. Stat. Sol. A, 201 (2004), 789.
• [11] KUPRIYANOV M.F., KONSTANTINOV G.M., PANICH A.E., Segnetoelektritcheskiye morphotropnye perekhody, Izd. Rostovskogo Uniwiersiteta, Rostov na Donu (1992).
• [12] WANG Z.Y., CHEN T.G., Phys. Stat. Sol. A, 167 (1998), R3–R4.
• [13] WANG C., FANG Q.F., ZHU Z.G., J. Phys. D: Appl. Phys., 35 (2002), 1545.
• [14] DELORME J.F., GOBIN P.F., Metaux, Corr. Ind., 573 (1973), 185.
• [15] CZEKAJ D., Technology, Properties and Applications of PZT Thin Films, University of Silesia, Katowice, 2002.
• [16] ZARYCKA A., ZACHARIASZ R., ILCZUK J., CHROBAK A., Mater. Sci.-Poland, 23, (2005), 159.
• [17] GUO L., LYASHCHENKO A., DONG X., Mater. Lett. 56 (2002), 849.