Prospect for research on spintronics of U3As4 ferromagnet and its semiconducting Th derivatives

• Autorzy: Wiśniewski P. , Henkie Z.
• Konferencja: Conference New Materials for Magnetoelectronics, Będlewo, 3-6 May 2006
• Języki publikacji: EN

Abstrakty

EN

Low magnetic field magnetisation along easy magnetic axis [111], Hall resistivity and the effect of magnetic field of different directions on U3As4 resistivity along the easy axis as well as along the hard one ([100]) have been examined. The Hall resistivity reaches the highest value ?H = 1.75 uqm at T = 113 K where it yields the giant anomalous Hall coefficient RS = 6.25 uqm T-1 and the tangent of the Hall angle of 0.42. Magnetic field exceeding the demagnetisation field Hdemag < 0.28 T changes the resistivity by up to 36 % at T = 77 K.

Słowa kluczowe

EN

ferromagnet; electronic transport; uranium compound; magnetic domain effect

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 2
• Strony: 533--539
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Wiśniewski P.

autor

Henkie Z.

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław 2, Poland

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