Electronic structure and electric properties of Gd(In1-xSnx)3 compounds

• Autorzy: Kwiecień M. , Chełkowska G. , Betlińska A.
• Konferencja: Conference New Materials for Magnetoelectronics, Będlewo, 3-6 May 2006
• Języki publikacji: EN

Abstrakty

EN

Results of measurements of the electrical resistivity, crystal and electronic structure of Gd(In1-xSnx)3 compounds are reported. All these compounds crystallize in the cubic AuCu3 type structure. The effect of partial substitution of In by Sn atoms is reflected in a linear increase of the unit cell volume. The temperature dependence of the electrical resistivity ?strongly depends on the composition. For compounds with x ??0.1, the ??(T) behavior, observed at low temperatures, is untypical of metals. The electronic structure of all systems was studied by using X-ray photoelectron spectroscopy. The chemical shift of the 4f Gd peak to higher binding energy with the increase of Sn concentration was detected. The valence band near the Fermi level is dominated by hybridized 5d Gd and 5p In/Sn states.

Słowa kluczowe

EN

intermetallics; photoelectron spectroscopy; electrical resistivity

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 2
• Strony: 411--416
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Kwiecień M.

autor

Chełkowska G.

autor

Betlińska A.

• Institute of Physics, Silesian University, Uniwersytecka 4, 40-007 Katowice, Poland

Bibliografia

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• [3] LIN C.L., YUEN T., MIHALISIN T., Phys. Rev. B, 54 (1996), 9254.
• [4] YUEN T., LIN C.L., MIHALISIN T., BYKOVETZ N., J. Appl. Phys., 70 (1991), 5995.
• [5] SZADE J., NEUMANN M., J. Phys., Condens. Matter, 11 (1999), 3887.