Ferromagnetic transition in Ge1-xMnxTe semiconductor layers

• Autorzy: Knoff W. , Dziawa P. , Osinniy V. , Taliashvili B. , Domuchowski V. , Łusakowska E. , Świątek K. , Story T.
• Konferencja: Conference New Materials for Magnetoelectronics, Będlewo, 3-6 May 2006
• Języki publikacji: EN

Abstrakty

EN

Magnetic properties of thin layers of p-Ge1-xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1-xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10-100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.

Słowa kluczowe

EN

ferromagnetic transition; thin layer; semimagnetic semiconductor

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 2
• Strony: 293--300
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Knoff W.

autor

Dziawa P.

autor

Osinniy V.

autor

Taliashvili B.

autor

Domuchowski V.

autor

Łusakowska E.

autor

Świątek K.

autor

Story T.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

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• [2] STORY T., in Lead Chalcogenides-Physics and Applications, D.R. Khokhlov (Ed.), Taylor and Francis, New York, 2003. 300 W. KNOFF et al.
• [3] RODOT M., LEWIS J., DODOT H., VILLERS G., COHEN J., MOLLARD P., J. Phys. Soc. Jpn. Suppl., 21 (1966), 627.
• [4] COCHRANE R.W., PLISCHKE M., STROM-OLSEN J.O., Phys. Rev. B, 9 (1974), 3013.
• [5] FUKUMA Y., ASADA H., NISHIMURA N., KOYANAGI T., J. Appl. Phys., 93 (2003), 4034.
• [6] FUKUMA Y., ARIFUKU M., ASADA H., KOYANAGI T., J. Appl. Phys., 97 (2005) 073910.