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Tin selenide thin films prepared through combination of chemical precipitation and vacuum evaporation technique

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Tin selenide thin films were prepared through combination of chemical precipitation and vacuum evaporation technique. The vacuum deposition was carried out at different quantity of the starting material. The difference in the structural and compositional properties of the deposited films were studied. The films were characterised using various techniques such as x-ray diffractometry, scanning electron microscope and energy dispersive analysis of x-ray. Photoactivity of the samples was studied using linear sweep voltammetry. The films were found to be p-type semiconductors. The optical bandgap energy was found to be indirect and equal to Eg = 1.25 eV.
Czasopismo
Rocznik
Strony
225--233
Opis fizyczny
Bibliogr. 21 poz.,
Twórcy
autor
  • Department of Chemistry, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Department of Chemistry, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
autor
  • Department of Chemistry, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Department of Chemistry, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Department of Chemistry, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
Bibliografia
  • [1] Lindgren T., Larsson M., Lindquist S., Sol. Energy Mater. Sol. Cells, 73 (2002), 377.
  • [2] Zweibel K, Sol. Energy Mat. Sol. Cells, 63 (2000), 375.
  • [3] Pramanik P., Bhattacharya S., J. Mater. Sci. Lett., 7 (1988), 1305.
  • [4] John J., Pradeep B., Mathai E., J. Mater. Sci., 29 (1994), 1581.
  • [5] Bennouna A., Tessier P., Priol M., Dang Tran Q., Robin S., phys. stat. sol. (b), 117 (1983), 51.
  • [6] Dang Tran Q., phys. stat. sol. (a), 86(1984), 421.
  • [7] Rao T.S., Chaudhuri A.K., J. Phys. D: Appl. Phys., 18 (1985), L35.
  • [8] Rao T.S., Samanthary B.K., Chaudhuri A.K., J. Mater. Sci. Lett., 4 (1985), 743.
  • [9] Dang Tran Q., Thin Solid Films, 149(1987), 197.
  • [10] Sharon M., Basavaswaran K., Solar Cells, 20 (1987), 323.
  • [11] Singh J.P., Bedi R.K., Jap. J. Appl. Phys., 29, 6 (1990), L869.
  • [12] Suguna P., Mangalaraj D., Narayandass S.A.K., Meena P., phys. stat. sol. (a), 155 (1996), 405.
  • [13] Subramanian B., Mahalingam T., Sanjeeviraja C., Jayachandran M., Chockalingam M.J., Thin Solid Films, 357 (1999), 119.
  • [14] Engelken R.D., Berry A.K., van Doren T.P., Boone J.L., Shahnazary A., J. Electrochem. Soc., 133 (1986), 581.
  • [15] Yamaki J., Yamaji A., Physica, B 150 (1981), 466.
  • [16] Singh J.P., Bedi R.K., Thin Solid Films 199 (1991), 9.
  • [17] Padiyan D.P., Marikani A., Murali K.R., Cryst. Res. Technol. 35 (2000), 949.
  • [18] Agarwal A., J. Cryst. Growth, 183 (1998), 347.
  • [19] Soliman H.S., Abdel Hady D.A., Abdel Rahman K.F., Youssef S.B., El-Shazly A.A., Physica A, 216(1995), 77.
  • [20] Singh J.P., Bedi R.K., J. Appl. Phys., 68, 6 (1990), 2776.
  • [21] Zainal Z., Saravanan N., Anuar K., Hussein M.Z., Yunus W.M.M., Greenwich J. Sci. Tech. (in press).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0005-0093
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