Application of electrostatic force microscopy in nanosystem diagnostics

• Autorzy: Gotszalk T. P. , Grabiec P. , Rangelow I. W.
• Języki publikacji: EN

Abstrakty

EN

The current state of art of electrostatic force microscopy is described in the paper. The principle of electrostatic force operation enabling one to analyse local voltage distribution and capacitance is pre-sented. The design and properties of electrostatic force microscopy microprobes are discussed. The application and manufacturing process of piezoresistive cantilevers with conductive tips and of silicon beams with metallic probe are presented. In order to show the capabilities of electrostatic force micros-copy methods of investigations of local voltage distribution on surfaces of microelectronic integrated circuits (IC) are described. Improvements of electrostatic force microscopy and of other electrical meth-ods based on scanning probe microscopy confirm an increasing interest in electrical probing at the nanometre scale.

Słowa kluczowe

EN

electrostatic force microscopy; nanosystem; voltage distribution; capacitance

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Materials Science
• Rocznik: 2003
• Tom: Vol. 21, No. 3
• Strony: 333--338
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Gotszalk T. P.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland

autor

Grabiec P.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Rangelow I. W.

• Institute of Technological Physics, IMA, University of Kassel, Heinrich Plett Str. 40, 34132 Kassel, Germany

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Poland

Bibliografia

• [1] Binnig G., Rohrer H., Helv. Phys. Acta, 55 (1982), 726.
• [2] Binnig G., Quate C.F.. Gerber Ch., Phys. Rev. Lett., 56 (1986), 930.
• [3] Martin Y., Abraham D.W., Wickrasinghe H.K., Appl. Phys. Lett., 52 (1988), 1103.
• [4] Weaver J.M.R., Abraham D.W., J. Vac. Sei. Technol. B9 (1991), 1559.
• [5] Mueller F., Mueller A.D., Hietschold M., Kaemmer S., Meas. Sei. Technol., 9 (1998), 734.
• [6] Watanabe S., Hane K., Ohye T., Ito M.,Goto T., J. Vac. Sei. Technol. Bll (1993), 1774.
• [7] Abraham D., Wiliams C., Slinkman J., Wickramasinghe H.K., J. Vac. Sei. Technol. B9 (1991).
• [8] Gotszalk T., Dumania P., Radojewski J., Hudek P., Sm F., RangelowI.W., J. Vac. Sei. Technol. B16 (1998), 3948.
• [9] Gotszalk T., Czarnecki P., Grabiec P., Domański K., Zaborowski M., Rangelow I., paper presented at EIPBN 2003 Conference in Tampa (FL), to be published in J. Vac. Sci. Technol.