Relaxation processes in ZrO2 at high pressures

• Autorzy: Korionov I. V. , Trefilova A. N. , Babushkin A. N. , Łojkowski W. , Opalińska A.
• Języki publikacji: EN

Abstrakty

EN

Relaxation processes in ZrO2 have been studied at pressures in the range of 22-50 GPa by measurements of high-pressure electrical relaxation of resistance in time. Electrical relaxation in nanocrystalline praseodymium doped zirconia powders and in a bulk material sample of zirconia has been measured in the pressure range from 35.5 to 50 GPa. The time dependence of electric resistance is most precisely described by exponential function up to the pressure of 35.5-50 GPa. The time dependence of electric resistance is most precisely described by exponential function up to the pressure 44-45.5 GPa. After treatment the pressure higher than 45.5 GPa, the character of the relaxation changes and resistance increased with time. Relaxation processes have not been observed in ZrO2 with 56 nm crystallite sizes.

Słowa kluczowe

EN

zirconium dioxide; electrical relaxation; pressure-induced phase transition; nanocrystalline sample

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2004
• Tom: Vol. 22, No. 3
• Strony: 241--244
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Korionov I. V.

• Department of Physics, Ural State University, Lenina 51, Ekaterinburg, Russia

autor

Trefilova A. N.

• Department of Physics, Ural State University, Lenina 51, Ekaterinburg, Russia

autor

Babushkin A. N.

• Department of Physics, Ural State University, Lenina 51, Ekaterinburg, Russia

autor

Łojkowski W.

• High Pressure Research Center, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Opalińska A.

• High Pressure Research Center, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

Bibliografia

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• [6] BONDIOLI F., FERRARI A.M., BRACCINI S., LEONELLI C., PELLACANI G.C., OPALIŃSKA A., CHUDOBA T., GRZANKA E., PALOSZ B., ŁOJKOWSKI W., Book of Abstracts, E-MRS 2003 Fall Meeting, Warsaw University of Technology, Warsaw, Poland (2003), p. 190.