Morphology, structural and absorption studies on gallium nitride powder

• Autorzy: Nyk M. , Stręk W. , Jabłoński J. M. , Misiewicz J.
• Języki publikacji: EN

Abstrakty

EN

A simple method of synthesis of nanocrystalline GaN powders is presented. The morphology and structure of the powders was characterized by XRD and TEM methods. It was observed that the sizes of single grains of gallium nitride depend on parameters of the technological process. Using the Sherrer's rule, the sizes of crystallites were determined to be in the range of 14-33 nm. It was found that a and c parameters of hexagonal gallium nitride slightly depend on the crystallite size. Changes of the absorption edge and Urbach energies are presented.

Słowa kluczowe

EN

GaN nanocrystallite; absorption; semiconductor

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2004
• Tom: Vol. 22, No. 3
• Strony: 235--240
• Opis fizyczny: Bibliogr. 21 poz.

Twórcy

autor

Nyk M.

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Stręk W.

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2, Poland

autor

Jabłoński J. M.

• Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2, Poland

autor

Misiewicz J.

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

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