Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector

• Autorzy: Fu X.S. , Yao S.Y. , Xu J.T. , Lu Y. , Zheng Y.G.
• Języki publikacji: EN

Abstrakty

EN

On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) were profoundly studied: the p-n junction depth was optimized to enhance the spectral responsivity within the wavelength range of 500-600 nm, an antireflection layer with the appropriate thickness was added to reduce the reflected light and enhance the sensitivity, the adjustment technique of spectral band response was adopted to remove the noise signal with normal silicon absorptive wavelengths. Eventually, the spectral responsivity SNR can be over 104 at 500-600 nm while the peak of spectral responsivity is 0.48 A/W at about 520 nm. After being optimized, silicon p-n junction photodetectors, which possess the properties of lower dark current, higher sensitivity, shorter response time and larger SNR, can be achieved.

Słowa kluczowe

EN

silicon p-n junction photodetector; antireflection layer; adjustment technique of spectrum band; spectral responsivity; high signal-to-noise ratio (SNR)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 421--428
• Opis fizyczny: Bibliogr. 6 poz.,

Twórcy

autor

Fu X.S.

autor

Yao S.Y.

autor

Xu J.T.

autor

Lu Y.

autor

Zheng Y.G.

• Tianjin University, Tianjin, China 300072

Bibliografia

• [1] LU CHUNSHEN, Optoelectronic Technology and Application, Mechanical Industry Publishing House, Beijing 1992.
• [2] LIU ENKE, et al., Semiconductor Physics, Electronic Industry Publishing House, Beijing 2003.
• [3] SZE S.M., Physiscs of Semiconductor Devices, Electronic Industry Publishing House, Beijing 1987.
• [4] YIN CHANGSONG, ZHU XIAOGANG, Improvement of ultraviolet responsivity for silicon photodetector, Chinese Journal of Semiconductors 18(7), 1997, pp. 523–6.
• [5] LIU L.-N., CHEN C., LIU C.-H., Numerical simulation of spectral response for 650 nm silicon photodetector, Semiconductor Photonics and Technology 9(2), 2003, p. 82.
• [6] ZHANG SHENGCAI, ZHENG YUNGUANG et al., The analysis for reliability and life of the photo-sensitive diodes, Journal of Optoelectronics Laser 14(5), 2003, pp. 466–8.