Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template

• Autorzy: Miasojedovas S. , Jursenas S. , Kuokstis E. , Zukauskas A. , Gaevski M.E. , Lee J. , Shatalov M. , Gong Z. , Adivarahan V. , Sattu A. , Mokina I. , Yang J. , Asif Khan M.
• Języki publikacji: EN

Abstrakty

EN

We report on the luminescence characterization of InGaN/GaN multiple quantum well (MQW) structures with average 15% In content in the well layers, grown on polar and non-polar sapphire substrates utilizing epitaxial lateral overgrowth (ELOG) technique. Significant modification of the emission properties of MQWs grown over non-polar ELOG structure in comparison with non-polar orientation was observed. It was attributed to the formation of In-rich quantum dot like structures in the vicinity of substrate related defects along stripes formed during ELOG procedure. The absence of the stimulated emission and the significant reduction of carrier lifetime, observed under strong excitation, indicate the high density of nonradiative centers in the In-rich quantum dot regions of non-polar ELOG MQWs.

Słowa kluczowe

EN

luminescence; InGaN/GaN; non-polar; multiple quantum wells (MQWs); epitaxial lateral overgrowth (ELOG); quantum dots

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 351--358
• Opis fizyczny: Bibliogr. 12 poz.,

Twórcy

autor

Miasojedovas S.

autor

Jursenas S.

autor

Kuokstis E.

autor

Zukauskas A.

autor

Gaevski M.E.

autor

Lee J.

autor

Shatalov M.

autor

Gong Z.

autor

Adivarahan V.

autor

Sattu A.

autor

Mokina I.

autor

Yang J.

autor

Asif Khan M.

• Institute of Material Science and Applied Research, Vilnius University LT-10222 Vilnius, Lithuania

Bibliografia

• [1] NAKAMURA S., CHICHIBU S.F., Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, Taylor and Francis, London 2000.
• [2] ŽUKAUSKAS A., SHUR M.S., GASKA R., Introduction to Solid-State Lighting, Wiley, New York 2002.
• [3] JURŠĖNAS S., KUOKŠTIS E., MIASOJEDOVAS S., KURILČIK G., ŽUKAUSKAS A., CHEN C.Q., YANG J.W., ADIVARAHAN V., ASIF KHAN M., Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth, Applied Physics Letters 85(5), 2004, pp. 771–3.
• [4] JURŠĖNAS S., MIASOJEDOVAS S., KURILČIK G., LIUOLIA V., ŽUKAUSKAS A., CHEN C.Q., YANG J.W., KUOKŠTIS E., ADIVARAHAN V., ASIF KHAN M., Luminescence of highly photoexcited GaN epilayers and heterostructures grown on different sapphire crystal planes, Acta Physica Polonica A 107(2), 2005, pp. 235–9.
• [5] JURŠĖNAS S., KUOKŠTIS E., MIASOJEDOVAS S., KURILČIK G., ŽUKAUSKAS A., CHEN C.Q., YANG J.W., ADIVARAHAN V., ASIF KHAN M., Luminescence of highly excited nonpolar a-plane GaN and AlGaN/GaN multiple quantum wells, Acta Physica Polonica A 105(6), 2004, pp. 567–73.
• [6] CHAKRABORTY A., KELLER S., MEIER C., HASKELL B.A., KELLER S., WALTEREIT P., DENBAARS S.P., NAKAMURA S., SPECK J.S., MISHRA U.K., Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN, Applied Physics Letters 86(3), 2005, pp. 31901/1–3.
• [7] CHITNIS A., CHEN C., ADIVARAHAN V., SHATALOV M., KUOKSTIS E., MANDAVILLI V., YANG J., ASIF KHAN M., Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire, Applied Physics Letters 84(18), 2004, pp. 3663–5.
• [8] CHAKRABORTY A., HASKELL B.A., KELLER S., SPECK J.S., DENBAARS S.P., NAKAMURA S., MISHRA U.K., Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak, Applied Physics Letters 85(22), 2004, pp. 5143–5.
• [9] MIASOJEDOVAS S., JURŠĖNAS S., ŽUKAUSKAS A., IVANOV V.YU., GODLEWSKI M., LESZCZYNSKI M., PERLIN P., SUSKI T., Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire, Journal of Crystal Growth 281(1), 2005, pp. 183–7.
• [10] KHAN M.A., KRISHNANKUTTY S., SKOGMAN R.A., KUZNIA J.N., OLSON D.T., GEORGE T., Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature, Applied Physics Letters 65(5), 1994, pp. 520–1.
• [11] CHEN C.Q., ZHANG J.P., YANG J.W., ADIVARAHAN V., RAI S., WU S., WANG H., SUN W., SU M., GONG Z., KUOKSTIS E., GAEVSKI M., KHAN M.A., A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire, Japanese Journal of Applied Physics, Pt. 2: Letters 42(7B), 2003, pp. L818–20.
• [12] CHEN C.Q., SHATALOV M., KUOKSTIS E., ADIVARAHAN V., GAEVSKI M., RAI S., KHAN M.A., Optically pumped lasing at 353 nm using non-polar a-plane AlGaN multiple quantum wells over r-plane sapphire, Japanese Journal of Applied Physics, Pt. 2: Letters 43(8B), 2004, pp. L1099–102.