Application of spatially resolved thermoreflectance for the study of facet heating in high power semiconductor lasers

• Autorzy: Bugajski M. , Ochalski T. , Piwonski T. , Wawer D.
• Języki publikacji: EN

Abstrakty

EN

We have developed a new technique for monitoring the facet heating in semiconductor lasers and for correlating these measurements with the performance and reliability of the device. The method is based on thermoreflectance, which is a modulation technique relying on periodic facet temperature modulation induced by pulsed current supply of the laser. The periodic temperature change of the laser induces variation of the refractive index and consequently modulates the probe beam reflectivity. The technique has a spatial resolution of about 1 m and temperature resolution better than 1 K, and can be used for temperature mapping over a 300 m × 300 m area. It can be applied to any kind of edge emitting lasers or laser bars. The technique is crucial for understanding the thermal behavior of a device.

Słowa kluczowe

EN

thermoreflectance; semiconductor lasers

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 339--349
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Bugajski M.

autor

Ochalski T.

autor

Piwonski T.

autor

Wawer D.

• Institute of Electron Technology, al. Lotników 32/46, 42-668 Warszawa, Poland

Bibliografia

• [1] EPPERLEIN P.W., Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: A newly developed technique for laser characterization, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes 32(12A), 1993, pp. 5514–22.
• [2] EPPERLEIN P.W., BONA G.L., Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasers, Applied Physics Letters 62(24), 1993, pp. 3074–6.
• [3] HAYAKAWA T., Facet temperature distribution in broad stripe high power laser diodes, Applied Physics Letters 75(10), 1999, pp. 1467–9.
• [4] SCHAUB E., Optical absorption rate determination, on the front facet of high-power GaAs laser diodes, by means of thermoreflectance technique, Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes and Review Papers 40(4B), 2001, pp. 2752–6.
• [5] MATATAGUI E., THOMPSON A.G., CARDONA M., Thermoreflectance in semiconductors, Physical Review 176(3), 1968, pp. 950–60.
• [6] DILHAIRE S., GRAUBY S., CLAEYS W., Calibration procedure for temperature measurements by thermoreflectance under high magnification conditions, Applied Physics Letters 84(5), 2004, pp. 822–4.
• [7] TESSIER G., HOLE S., FOURNIER D., Quantitative thermal imaging by synchronuous thermoreflectance with optimized illumination wavelengths, Applied Physics Letters 78(16), 2001, pp. 2267–9.
• [8] OZAKI S., ADACHI S., Spectroscopic ellipsometry and thermoreflectance of GaAs, Journal of Applied Physics 78(5), 1995, pp. 3380–6.
• [9] HALL D.C., GOLDBERG L., MEHUYS D., Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe, Applied Physics Letters 61(4), 1992, pp. 384–6.
• [10] ROMMEL J.M., GAVRILOVIC P., DABKOWSKI F.P., Photoluminescence measurement of facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes, Journal of Applied Physics 80(11), 1996, pp. 6547–9.
• [11] EPPERLEIN P.W., BONA G.L., ROENTGEN P., Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements, Applied Physics Letters 60(6), 1992, pp. 680–2.
• [12] PUCHERT R., BARWOLFF A., MENZEL U., LAU A., VOSS M., ELSAESSER T., Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments, Journal of Applied Physics 80(10), 1996, pp. 5559–63.
• [13] TOMM J.W., THAMM E., BARWOLFF A., ESAESSER T., LUFT J., BAEUMLER M., MUELLER S., JANTZ W., RECHENBERG I., ERBERT G., Facet degradation of high-power diode laser arrays, Applied Physics A: Materials Science Processing A70(4), 2000, pp. 377–81