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High resolution and analytical electron microscopy of ZnO layers doped with magnetic ions for spintronic applications

Wybrane pełne teksty z tego czasopisma
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Języki publikacji
EN
Abstrakty
EN
We have investigated the effect of temperature on the crystalline quality of (Zn, Mn)O thin films prepared by rf magnetron sputtering using c-plane sapphire substrates. The layers comprised an Mn doped part towards the surface on top of about a 150 nm pure ZnO layer. They exhibit a columnar structure depending on the deposition temperature; the adjacent domains are rotated from one another by 90°, putting [1010] and [1120] directions face to face. At high Mn concentration this columnar structure is blurred by the formation of Mn rich precipitates for which we report on the structure, composition and crystallographic relationships with the surrounding matrix.
Czasopismo
Rocznik
Strony
311--320
Opis fizyczny
Bibliogr. 320 poz.,
Twórcy
autor
autor
autor
autor
  • SIFCOM, 14050 Caen Cedex, UMR CNRS 6176, France
Bibliografia
  • [1] DIETL T., OHNO H., MATSUKURA F., CIBERT J., FERRANT D., Zener model description of ferromagnetism in zinc-blende magnetic semiconductors, Science 287(5455), 2000, pp. 1019–22.
  • [2] PEARTON S.J., NORTON D.P., IP K., HEO Y.W., STEINER T., Recent advances in processing of ZnO, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22(3), 2004, pp. 932–48.
  • [3] HEO Y.W., IVILL M.P., IP K., NORTON D.P., PEARTON S.J., KELLY J.G., RAIRIGH R., HEBARD A.F., STEINER T., Effects of high-dose Mn implantation into ZnO grown on sapphire, Applied Physics Letters 84(13), 2004, pp. 2292–4.
  • [4] YOON S.W., CHO S.-B., WE S.C., YOON S., SUH B.J., SONG H.K., SHIN Y.J., Magnetic properties of ZnO-based diluted magnetic semiconductors, Journal of Applied Physics 93(10), 2003, pp. 7879–81.
  • [5] JUNG S.W., AN S.-J., YI G.-C., JUNG C.U., LEE S.-I., CHO S., Ferromagnetic properties of Zn1–xMnxO epitaxial thin films, Applied Physics Letters 80(24), 2002, pp. 4561–3.
  • [6] PEARTON S.J., ABERNATHY C.R., NORTON D.P., HEBARD A.F., PARK Y.D., BOATNER L.A., BUDAI J.D., Advances in wide bandgap materials for semiconductor spintronics, Materials Science and Engineering R: Reports R40(4), 2003, pp. 137–68.
  • [7] SRIKANT V., SERGO V., CLARKE D.R., Epitaxial aluminum-doped zinc oxide thin films on sapphire. I. Effect of substrate orientation, Journal of the American Ceramic Society 78(7), 1995, pp. 1931–4.
  • [8] ROTH A.P., WILLIAMS D.F., Properties of zinc oxide films prepared by the oxidation of diethyl zinc, Journal of Applied Physics 52(11), 1981, pp. 6685–92.
  • [9] COCKAYNE B., WRIGHT P.J., Metalorganic chemical vapour deposition of wide band gap II-VI compounds, Journal of Crystal Growth 68(1), 1984, pp. 223–30.
  • [10] GORLA C.R., EMANETOGLU N.W., LIANG S., MAYO W.E., LU Y., WRABACK M., SHEN H., Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011 2) sapphire by metalorganic chemical vapor deposition, Journal of Applied Physics 85(5), 1999, pp. 2595–602.
  • [11] JONES A.C., RUSHWORTH S.A., AULD J., Recent developments in metalorganic precursors for metalorganic chemical vapour deposition, Journal of Crystal Growth 146(1–4), 1995, pp. 503–10.
  • [12] VIGUE F., VENNEGUES P., DEPARIS C., VEZIAN S., LAUGT M., FAURIE J.-P., Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire, Journal of Applied Physics 90(10), 2001, pp. 5115–19.
  • [13] LIU C., YUN F., XIAO B., CHO S.-J., MOON Y.T., MORKOÇ H., ABOUZAID M., RUTERANA P., YU K.M., WALUKIEWICZ W., Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, Journal of Applied Physics 97(12), 2005, p. 126107.
  • [14] ÖZGÜR Ü., TEKE A., LIU C., CHO S.-J., MORKOÇ H., EVERITT H.O., Stimulated emission and time -resolved photoluminescence in rf-sputtered ZnO thin films, Applied Physics Letters 84(17), 2004, pp. 3223–5.
  • [15] DOVIDENKO K., OKTYABRKY S., NARAYAN J., RAZEGHI M., Aluminum nitride films on different orientations of sapphire and silicon, Journal of Applied Physics 79(5), 1996, pp. 2439–45.
  • [16] PONCE F.A., Defects and interfaces in GaN epitaxy, MRS Bulletin 22(2), 1997, pp. 51–7.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0002-0074
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