Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers

• Autorzy: Kazlauskas K. , Jursenas S. , Miasojedovas S. , Pobedinskas P. , Tamulaitis G. , Zukauskas A. , Ivanov V.Y. , Godlewski M.
• Języki publikacji: EN

Abstrakty

EN

Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active layers for InGaN-based light emitters. Recently proposed double-scaled potential profile model is used to reveal the scale of potential fluctuations in the individual In-rich regions as well as the dispersion of the average exciton localization energy in these regions. The influence of the different potential fluctuation scales on the stimulated emission threshold and luminescence decay time of highly excited InGaN active layers is studied.

Słowa kluczowe

EN

photoluminescence; InGaN quantum wells; Monte Carlo simulation; exciton hopping

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 181--185
• Opis fizyczny: Bibliofr. 6 poz.,

Twórcy

autor

Kazlauskas K.

autor

Jursenas S.

autor

Miasojedovas S.

autor

Pobedinskas P.

autor

Tamulaitis G.

autor

Zukauskas A.

autor

Ivanov V.Y.

autor

Godlewski M.

• Institute of Materials Science and Applied Research Vilnius University, Lithuania

Bibliografia

• [1] KAZLAUSKAS K., TAMULAITIS G., ŽUKAUSKAS A., KHAN M.A., YANG J.W., ZHANG J., SIMIN G., SHUR M.S., GASKA R., Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping, Applied Physics Letters 83(18), 2003, pp. 3722–4.
• [2] KAZLAUSKAS K., TAMULAITIS G., POBEDINSKAS P., ŽUKAUSKAS A., SPRINGIS M., HUANG C.-F., CHENG Y.-C., YANG C.C., Exciton hopping in InxGa1–xN multiple quantum wells, Physical Review B: Condensed Matter and Materials Physics 71(8), 2005, pp. 85306/1–5.
• [3] SHEE S.K., KWON Y.H., LAM J.B., GAINER G.H., PARK G.H., HWANG S.J., LITTLE B.D., SONG J.J., MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence, Journal of Crystal Growth 221, 2000, pp. 373–7.
• [4] HOLST J., KASCHNER A., GFUG U., HOFFMANN A., THOMSEN C., BERTRAM F., RIEMANN T., RUDLOFF D., FISCHER P., CHRISTEN J., AVERBECK R., RIECHERT H., HEUKEN M., SCHWAMBERA M., SCHÖN O., Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD, Phys. Status Solidi A 180(1), 2000, pp. 327–32.
• [5] KAZLAUSKAS K., TAMULAITIS G., MICKEVIČIUS J., KUOKŠTIS E., ŽUKAUSKAS A., CHENG Y.-C.,WANG H.-C., HUANG C.-F., YANG C.C., Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization, Journal of Applied Physics 97(1), 2005, pp. 13525/1–7.
• [6] JURŠĖNAS S., KURILČIK N., KURILČIK G., ŽUKAUSKAS A., PRYSTAWKO P., LESZCZYNSKI M., SUSKI T., PERLIN P., GRZEGORY I., POROWSKI S., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, Applied Physics Letters 78(24), 2001, pp. 3776–8.