HBV deep mesa etching in InGaAs/InAlAs/AlAs heterostructures on InP substrate

• Autorzy: Górska M. , Wrzesińska H. , Szerling A. , Hejduk K. , Ratajczak J. , Łysko J.M.
• Konferencja: Sol-Gel Materials Research, Technology, Applications SGM'04, 6-11 june 2004
• Języki publikacji: EN

Abstrakty

EN

The chemical composition of newly developed anisotropic etching solution and several experimental results obtained with heterostructure barrier varactor (HBV) deep mesa formation are presented. The novel solution enables the deep etching of the InGaAs/InAlAs/AlAs heterostructure over InP substrate, up to 5 žm in the [100] crystal direction. It ensures etch-stop at the InP substrate and gives almost perfect surface quality, with mesa profiles meeting device design requirements. The etching solution is a mixture of two components: A (H2SO4:H2O2:H2O = 1:1:8) and B (C6H8O7:H2O = 1:1), in the proportion B:(H2O2 content in A) =1:1.

Słowa kluczowe

EN

heterostructure; anisotropic; wet etching; mesa

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2005
• Tom: Vol. 23, No. 1
• Strony: 221--226
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Górska M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Wrzesińska H.

autor

Szerling A.

autor

Hejduk K.

autor

Ratajczak J.

autor

Łysko J.M.

Bibliografia

• [1] KOLLBERG E.L., RYDBERG A., Electronics Lett., 25 (1989), 1696.
• [2] STANO A., J. Electrochem. Soc., 134 (1987), 448.
• [3] HOWES M.J.,MORGAN D.V., Gallium Arsenide. Materials, Devices and Circuits, Wiley, Chichester, 1985.
• [4] GÓRSKA M.,WRZESIŃSKA H., ŁYSKO J.M., patent pending No. P-360860, Poland.