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Optical characterisation of vertical-external-cavity surface-emitting lasers (VECSELs)

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Języki publikacji
EN
Abstrakty
EN
The purpose of this paper is to outline the principles of optical characterisation of the new kind of semiconductor devices: vertical-external-cavity surface-emitting lasers (VECSELs). Realisation of high efficiency semiconductor devices requires high accuracy of epitaxial process. Gain characteristic of VECSEL structure is strongly affected by the precise placing of the quantum wells within the multilayer structure. Detailed optical characterisation of particular parts of the structure allows growth errors to be identified and gives insight into the lasing behaviour. In this work, we present an approach taking advantage of two spectroscopic techniques, photoluminescence and reflectance measurements, to study properties of VECSEL structure based on InGaAs/GaAs active region, designed for emission wavelength at 980 nm.
Czasopismo
Rocznik
Strony
449--457
Opis fizyczny
Bibliogr. 6 poz.
Twórcy
autor
autor
autor
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
  • [1] SALE T.E., Vertical Cavity Surface Emitting Lasers, Research Studies Press, Taunton 1995.
  • [2] GRABHERR M., WEIGL B., REINER G., MICHALZIK R., MILLER M., EBELING K.J., High power top-surface emitting oxide confined vertical-cavity laser diodes, Electronics Letters 32(18), 1996, pp. 1723–4.
  • [3] TROPPER A.C., HOOGLAND S., Extended cavity surface-emitting semiconductor lasers, Progress in Quantum Electronics 30(1), 2006, pp. 1–43.
  • [4] GIESEN A., HUGEL H., VOSS A., WITTING K., BRAUCH U., OPOWER H., Scalable concept for diode-pumped high-power solid-state lasers, Applied Physics B: Lasers and Optics B58(5), 1994, pp. 365–72.
  • [5] BEYERTT S.S., ZORN M., KÜBLER T., WENZEL H., WEYERS M., GIESEN A., TRÄNKLE G., BRAUCH U., Optical in-well pumping of a semiconductor disk laser with high optical efficiency, IEEE Journal of Quantum Electronics 41(12), 2005, pp. 1439–49.
  • [6] WÓJCIK A., OCHALSKI T.J., MUSZALSKI J., KOWALCZYK E., GOSZCZYŃSKI K., BUGAJSKI M., Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures, Thin Solid Films 412(1–2), 2002, pp. 114–21.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW6-0011-0014
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