Microphotoreflectance spectroscopy - a modulation technique with high spatial resolution

• Autorzy: Sęk G. , Podemski P. , Rudno-Rudziński W. , Gumienny Z. , Misiewicz J.
• Języki publikacji: EN

Abstrakty

EN

There is presented an experimental setup for the measurements of photomodulated reflectivity spectra of low-dimensional semiconductor structures with a micrometer spatial (plane) resolution. The setup has been developed as an extended and improved version of a standard bright configuration, i.e., where the probe beam is provided directly by a broad band light source (e.g., halogen lamp) and then it is dispersed after being reflected off the sample. It gives typically the plane resolution, expressed by the spot size of the beams on the sample surface, on the level of single millimetres. Introducing optics, based on a long working distance and a high numerical aperture microscope objective, has allowed decreasing the spot size by three orders of magnitude into the micrometer range for both the probe and the pump beams. The optimization of microphotoreflectance signal to noise ratio has made it possible to detect the normalized reflectivity coefficient changes (?R/R) from an ultrathin single quantum well formed of the wetting layer in the structure with self-assembled InAs/GaAs quantum dots and from single pillar microresonators of the lateral sizes in the range of single micrometers.

Słowa kluczowe

EN

photoreflectance; high resolution; microphotoreflectance

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 4
• Strony: 439--447
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Sęk G.

autor

Podemski P.

autor

Rudno-Rudziński W.

autor

Gumienny Z.

autor

Misiewicz J.

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Bibliografia

• [1] POLOCZEK P., SĘK G., MISIEWICZ J., LÖFFLER A., REITHMAIER J.P., FORCHEL A., Optical properties of low-strained InxGa1–xAs/GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition, Journal of Applied Physics 100(1), 2006, p. 013503.
• [2] MOTYKA M., SĘK G., KUDRAWIEC R., MISIEWICZ J., LI L.H., FIORE A., On the modulation mechanisms in photoreflectance of an ensemble of self-assembled InAs/GaAs quantum dots, Journal of Applied Physics 100(7), 2006, p. 073502.
• [3] RUDNO-RUDZIŃSKI W., SĘK G., MISIEWICZ J., LAMAS T.E., QUIVY A.A., The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm followed by photoreflectance spectroscopy, Journal of Applied Physics 101(7), 2007, p. 073518.
• [4] MOTYKA M., SĘK G., RYCZKO K., ANDRZEJEWSKI J., MISIEWICZ J., LI L.H., FIORE A., PATRIARCHE G., Optical and electronic properties of GaAs-based structures with columnar quantum dots, Applied Physics Letters 90(18), 2007, p. 181933.
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• [7] AIGOUY L., POLLAK F.H., GUMBS G., Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser, Applied Physics Letters 70(19), 1997, pp. 2562–4.
• [8] MOTYKA M., KUDRAWIEC R., SĘK G., MISIEWICZ J., KRESTNIKOV I.L., MIKHRIN S., KOVSH A., Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers, Semiconductor Science and Technology 21(10), 2006, pp. 1402–7.
• [9] SĘK G., RYCZKO K., MOTYKA M., ANDRZEJEWSKI J., WYSOCKA K., MISIEWICZ J., LI L.H., FIORE A., PATRIARCHE G., Wetting layer states of InAs/GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer, Journal of Applied Physics 101(6), 2007, p. 063539.
• [10] GHOSH S., ARORA B.M., Photoreflectance spectroscopy with white light pump beam, Review of Scientific Instruments 69(3), 1998, pp. 1261–6.
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• [12] HEWAPARAKRAMA K.P., WILSON A., MAKOWSKI S., JACKSON H.E., SMITH L.M., KARCZEWSKI G., KOSSUT J., Subwavelength multichannel imaging using a solid immersion lens: Spectroscopy of excitons in single quantum dots, Applied Physics Letters 85(22), 2004, pp. 5463–5.