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Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Double quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm (In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 žA.
Czasopismo
Rocznik
Strony
415--421
Opis fizyczny
Bibliogr. 12 poz.
Twórcy
autor
autor
  • Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
  • [1] BUYANOVA I.A., CHEN W.M., MONEMAR B., Electronic properties of Ga(In)NAs alloys, MRS Internet Journal Nitride Semiconductor Research 6, 2(2001).
  • [2] WU J., SHAN W., WALUKIEWICZ W., Band anticrossing in highly mismatched III–V semiconductor alloys, Semiconductor Science and Technology 17(8), 2002, pp. 860–9.
  • [3] SHAN W., WALUKIEWICZ W., AGER J.W., HALLER E.E., GEISZ J.F., FRIEDMAN D.J., OLSON J.M., KURTZ S.R., Band anticrossing in GaInNAs alloys, Physical Review Letters 82(6), 1999, pp. 1221–4.
  • [4] GEISZ J.F., FRIEDMAN D.J., III–N–V semiconductors for solar photovoltaic applications, Semiconductor Science and Technology 17(8), 2002, pp. 769–77.
  • [5] SPRUYTTE S.G., COLDREN C.W., HARRIS J.S., WAMPLER W., KRISPIN P., PLOOG K., LARSON M.C., Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal, Journal of Applied Physics 89(8), 2001, pp. 4401–6.
  • [6] FISCHER C.H., BHATTACHARYA P., Photoluminescence and deep levels in lattice-matched InGaAsN/GaAs, Journal Applied Physics 96(8), 2004, pp. 4176–80 .
  • [7] JANOTTI A., ZHANG S.B., WEI S.H., VAN DE WALLE C.G., Effects of hydrogen on the electronic properties of dilute GaAsN alloys, Physical Review Letter 89(8), 2002, p. 086403.
  • [8] BUYANOVA I.A., IZADIFARD M., CHEN W.M., POLIMENI A., CAPIZZI M., XIN H.P., TU C.W., Hydrogen-induced improvements in optical quality of GaNAs alloys, Applied Physic Letters 82(21), 2003, pp. 3662–4.
  • [9] PUCICKI D., Investigation of epitaxial growth kinetic of InyGa1–y As1–xNx/GaAs heterostructures dedicated to optoelectronic devices, Ph.D. Thesis, Wrocław University of Technology, Poland 2006 (in Polish).
  • [10] FISCHER M., GOLLUB D., REINHARDT M., KAMP M., FORCHEL A., GaInNAs for GaAs based lasers for the 1.3 to 1.5 μm range, Journal of Crystal Growth 251(1–4), 2003, pp. 353–9.
  • [11] ÜNLÜ M.S., STRITE S., Resonant cavity enhanced photonic devices, Journal of Applied Physics 78(2), 1995, pp. 607–39.
  • [12] HEROUX J.B., YANG X., WANG W.I., GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm, Applied Physics Letters 75(18), 1999, pp. 2716–8.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW6-0011-0010
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