Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

• Autorzy: Pucicki D. , Zborowska-Lindert I. , Ściana B. , Radziewicz D. , Boratyński B.
• Języki publikacji: EN

Abstrakty

EN

Double quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm (In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 žA.

Słowa kluczowe

EN

p-i-n photodetector; diluted nitrides; (In,Ga)(As,N); GaAs-based photodetectors; double quantum well (DQW); heterostructures

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 4
• Strony: 415--421
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Pucicki D.

autor

Zborowska-Lindert I.

autor

Ściana B.

autor

Radziewicz D.

autor

Boratyński B.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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