Resonant microcavity enhanced infrared photodetectors

• Autorzy: Kaniewski J. , Muszalski J. , Piotrowski J.
• Języki publikacji: EN

Abstrakty

EN

Resonant cavity enhanced (RCE) infrared photodetectors are used in many applications due to their high quantum efficiency and large bandwidth. Therefore, wide device diversity is desired. In this paper, recent tendencies in design and fabrication of these devices are presented. Various issues for InGaAs/InA1As/InP RCE detectors operating at 1.55 žm and HgCdTe/CdTe/GaAs RCE devices dedicated for 10.6 žm radiation detection are discussed. The detector structures were grown by means of two industry standard technologies, i.e., molecular beam epitaxy and metaloorganic chemical vapor deposition. Optimized devices can be optically integrated with monolithic microlenses.

Słowa kluczowe

EN

optoelectronic device characterization; design; modeling; III-V and II-VI semiconductors

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 4
• Strony: 405--413
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Kaniewski J.

autor

Muszalski J.

autor

Piotrowski J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

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