Parameters comparison of p-i-n and quantum well solar cells

• Autorzy: Prażmowska J. , Korbutowicz R. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

Double gallium arsenide quantum wells (2QW) were inserted within Al_xGa_1-xAs barriers of the intrinsic layer of an ordinary solar cell. Structure parameters have strong influence on device performance and should be precisely controlled in order to obtain the enhancement of conversion efficiency. Computer simulations of solar cells were carried out by SimWindows program v. 1.5.0. Some parameters of optimized quantum well solar cells (QWSC) and reference p-i-n solar cell structures, like: series resistance R_s, shunt resistance R_sh, emission coefficients (n₁ and n₂), diffusion and recombination components of current (J_d and J_r) were compared.

Słowa kluczowe

EN

quantum well solar cells (QWSC); conversion efficiency; SimWindows

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 4
• Strony: 371--376
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Prażmowska J.

autor

Korbutowicz R.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, Wrocław, Poland

Bibliografia

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