Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx /Si3N4 bilayers.

• Autorzy: Adamowicz B. , Miczek M. , Hashizume T. , Klimasek A. , Żywiecki J.
• Języki publikacji: EN

Abstrakty

EN

AlGaN/GaN heterostructures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers were characterized electrically by capacitance-voltage measurements and chemically by Auger microscopy chemical in-depth profiling. The 2-dimensional electron gas density was estimated from C-V curves and the electronic quality of the bilayers was evaluated from C-V hysteresis. Detailed variations of Auger peaks, in particular for oxygen, silicon, nitrogen, and carbon, versus argon ion sputtering time were registered. The electronic properties of these two structures were compared with each other and to their chemistry.

Słowa kluczowe

EN

gallium nitride; HEMT; insulated gate; passivation; C-V; Auger spectroscopy; chemical in-depth profiles

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 4
• Strony: 327--334
• Opis fizyczny: Bibliogr. 25 poz.

Twórcy

autor

Adamowicz B.

autor

Miczek M.

autor

Hashizume T.

autor

Klimasek A.

autor

Żywiecki J.

• Department of Applied Physics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

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