GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

• Autorzy: Wang Y. , Ma X. , Wang C.L. , Lin T. , Zhen K. , Wang J. , Zhong L. , Jia Y. , Wei Z.Y.
• Języki publikacji: EN

Abstrakty

EN

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns was obtained.

Słowa kluczowe

EN

GaAs; low temperature; Q-switch; Nd:YVO4 laser

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 1
• Strony: 23--28
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Wang Y.

autor

Ma X.

autor

Wang C.L.

autor

Lin T.

autor

Zhen K.

autor

Wang J.

autor

Zhong L.

autor

Jia Y.

autor

Wei Z.Y.

• Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China

Bibliografia

• [1] MALYAREVICH A.M., DENISOV I.A., YUMASHEV K.V., MIKHAILOV V.P., CONROY R.S., SINCLAIR B.D., V:YAG – a new passive Q-switch for diode-pumped solid-state lasers, Applied Physics B: Lasers and Optics 67(5), 1998, pp. 555–8.
• [2] FELDMAN R., SHIMONY Y., BURSHTEIN Z., Passive Q-switching in Nd: YAG/Cr4+: YAG monolithic microchip laser, Optical Materials 24(1-2), 2003, pp. 393–9.
• [3] LI PING, WANG QINGPU, GAO DA, ZHANG QIDI, SUN LIANKE, LIU XUNMIN, ZHANG SHAOJUN, LIN BENFU, ZHANG FANWEN, Study of a passively Q-switched Nd:YAG laser with GaAs, Acta Optica Sinica 20(6), 2000, pp. 744–9.
• [4] GU JIANHUI, ZHOU FENG, XIE WENJIE, SIU CHUNG TAM, YEE LOY LAM, Passive Q-switching of a diode -pumped Nd:YAG laser with a GaAs output coupler, Optics Communications 165(4-6), 1999, pp. 245–9.
• [5] SPÜHLER G.J., PASCHOTTA R., FLUCK R., BRAUN B., MOSER M., ZHANG G., GINI E., KELLER U., Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers, Journal of the Optical Society of America B: Optical Physics 16(3), 1999, pp. 376–88
• [6] WANG YONGGANG, LI CHAOYANG, MA XIAOYU, ZHANG ZHIGANG, Passive Q-switching of flash -pumped Nd: YAG laser with ion-implanted GaAs, Chinese Journal of Semiconductors 25(2), 2004, pp. 148–51.
• [7] ZAYHOWSKI J.J., KELLEY P.L., Optimization of Q-switched lasers, IIEEE Journal of Quantum Electronics 27(9), 1991, pp. 2220–5.