Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. I. The model

• Autorzy: Czyszanowski T. , Wasiak M. , Nakwaski W.
• Języki publikacji: EN

Abstrakty

EN

Some design modifications and optimization of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers to reduce their room-temperature (RT) thresholds are discussed. To this end, a detailed optical model of arsenide diode lasers is developed and used to compare the impact of some structure details on RT lasing thresholds. In the model presented in the first part of the paper, both optical gain and losses are modeled rigorously. Optical fields within complex multi-layered structures of the SCH lasers are found using the downhill method. Threshold carrier concentrations are determined from the general balance of radiation gain and losses. As a result of the simulation, recommended basic design parameters for the above structures are deduced in the second part of the paper.

Słowa kluczowe

EN

aluminium compounds; carrier density; gallium arsenide; gradient index optics; III-V semiconductors; laser beam; optical losses; quantum well laser; waveguide laser

PL

laser falowodowy; związki glinu; arsenek galu; III-V półprzewodnik; półprzewodniki III-V; wiązka laserowa; laser o studni kwantowej; laser

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2001
• Tom: Vol. 31, nr 2
• Strony: 313--323
• Opis fizyczny: bibliogr. 24 poz.

Twórcy

autor

Czyszanowski T.

autor

Wasiak M.

autor

Nakwaski W.

• Instytut Fizyki Politechniki Łódzkiej, ul.Wólczańska 219,93-005 Łódź