Modelling of radial steam oxidation of AlAs layers in cylindrically symmetric mesa structures of vertical-cavity surface-emitting lasers

• Autorzy: Nakwaski W. , Maćkowiak P.
• Języki publikacji: EN

Abstrakty

EN

During the last several years selective steam oxidation process has evolved into a key technology in fabrication of high-performance vertical-cavity surface-emitting lasers (VCSELs). In the paper, kinetics of AlAs steam oxidation process in cylindrically symmetric VCSEL mesa structures is investigated theoretically. Compact analytical formulae describing the oxidation process are derived and discussed. The process parameters are extracted from existing experimental data. The parameters are found to be strongly dependent on the AlAs layer thickness and temperature. It is shown that significant differences exist between the predictions of the cylindrical model and those of widely used one-dimensional Cartesian model. Our detailed model can therefore be very important for achieving a good control of the oxidation process in fabrication of modern VCSELs

Słowa kluczowe

EN

aluminium compounds; III-V semiconductors; laser; surface-emitting lasers; semiconductor laser

PL

związki glinu; III-V półprzewodnik; półprzewodniki III-V; laser; laser półprzewodnikowy

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2001
• Tom: Vol. 31, nr 2
• Strony: 289--299
• Opis fizyczny: bibliogr. 17 poz.

Twórcy

autor

Nakwaski W.

autor

Maćkowiak P.

• Instytut Fizyki Politechniki Łódzkiej, ul.Wólczańska 219,93-005 Łódź