Resonant cavity enhanced photonic devices.

• Autorzy: Bugajski M. , Muszalski J. , Mroziewicz B. , Regiński K. , Ochalski T.J.
• Języki publikacji: EN

Abstrakty

EN

We review our recent works on technology, basic physics and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In/sub x/Ga/sub 1-x/As/GaAs planar microcavities with DBR reflectors. The room temperature emission in lambda -sized cavities is enhanced in comparison with its free space value, while in lambda /2-sized cavities suppression of spontaneous emission is observed. The characteristics of spontaneous emission in microcavities depend on the wavelength difference between the emitter and the cavity resonance. It has been shown that ideal tuning of the cavity can be achieved by adjusting sample temperature. In general, observed trends are in agreement with theoretical predictions. These changes to the spontaneous emission process directly affect vertical-cavity laser (VCSEL) properties. An increased coupling efficiency of spontaneous emission into the lasing mode is observed in VCSELs with lambda -sized cavities. We demonstrate the operation of resonant-cavity light emitting diodes (RC LED) and optically pumped VCSELs developed recently at the Department of Physics and Technology of Low Dimensional Structures of the Institute of Electron Technology. The epitaxial growth issues, fabrication technology and basic characteristics of these devices are discussed

Słowa kluczowe

EN

cavity resonator; distributed Bragg reflector lasers; gallium arsenide; III-V semiconductors; indium compounds; laser beam; molecular beam epitaxial growth; optical pumping

PL

resonator komorowy; laser; dioda elektroluminescencyjna; DEL; wzrost epitaksjalny; arsenek galu; III-V półprzewodnik; półprzewodniki III-V; związki indu; wiązka laserowa; pompowanie optyczne

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2001
• Tom: Vol. 31, nr 2
• Strony: 273--288
• Opis fizyczny: bibliogr. 11 poz.

Twórcy

autor

Bugajski M.

autor

Muszalski J.

autor

Mroziewicz B.

autor

Regiński K.

autor

Ochalski T.J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa