Impact of mismatch-related phenomena on a room-temperature operation of nitride VCSELs.

• Autorzy: Maćkowiak W. , Nakwaski W.
• Języki publikacji: EN

Abstrakty

EN

The influence of mismatch-related phenomena (mostly strain fields and structure defects) on a room-temperature (RT) operation of possible nitride VCSELs is examined using a simple but still detailed analytical model. Intentionally introduced stress fields within nitride VCSEL quantum-well (QW) active regions (band-gap engineering) are found to have a much weaker effect on their optical gain than in the case of conventional arsenide and phosphide VCSELs. Dislocation densities (including misfit dislocations), on the other hand, have a considerable harmful impact on VCSELs thresholds, mostly because of increasing scattering losses and decreasing internal quantum efficiency. Single-quantum-well nitride VCSELs are found to be very sensitive to the above impact. A reasonable increase in a number of QWs in multiple-quantum-well VCSELs tremendously improves their performance. In the case of relatively high dislocation densities, bulk double-heterostructure VCSELs may turn out to be the best nitride designs although they may also exhibit too high thresholds to lase at RT.

Słowa kluczowe

EN

mismatch-related phenomena; room-temperature operation; nitride VCSELs; strain fields; structure defects; stress fields; optical gain; dislocation densities

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2000
• Tom: Vol. 30, nr 1
• Strony: 125--140
• Opis fizyczny: Bibliogr. 84 poz., rys. 6

Twórcy

autor

Maćkowiak W.

autor

Nakwaski W.

• Institution Institute of Physics, Techical University of Lodz, ul. Wólczańska 219, 93-005 Łódź, Poland.