Optical characterisation of strained-layer In/sub x/Ga/sub 1-x/As/GaAs MQW LED grown by MOVPE.

• Autorzy: Sęk G. , Ciorga M. , Bryja L. , Misiewicz J. , Radziewicz D. , Ściana B. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In the PR spectra, except the fundamental transition observed also in the emission spectra, two extra features related to the active region of the device have been seen. The presence of these two excited state transitions allowed the band structure to be analysed and the correctness of the device performance to be checked. We repeated the measurements after the top p-doped GaAs cladding layer had been etched off and discussed the changes of the built-in electric field.

Słowa kluczowe

EN

optical characterisation; In/sub x/Ga/sub 1-x/As/GaAs MQW LED; strained-layer MQW LED; MOVPE; photoreflectance spectroscopy; photoluminescence; electroluminescence; room temperature optical investigation; 1,2-dichloroethane; strained-layer multiple quantum well; light-emitting diode; fundamental transition; emission spectra; active region; excited state transitions; band structure; device performance; p-doped GaAs cladding layer; built-in electric field

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2000
• Tom: Vol. 30, nr 1
• Strony: 183--188
• Opis fizyczny: Bibliogr. 16. poz., rys. 3

Twórcy

autor

Sęk G.

autor

Ciorga M.

autor

Bryja L.

autor

Misiewicz J.

autor

Radziewicz D.

autor

Ściana B.

autor

Tłaczała M.

• Institution Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.