Electrical and optical properties of sol-gel derive ZnO: Al thin films

• Autorzy: Sagar P. , Kumar M. , Mehra R. M.
• Języki publikacji: EN

Abstrakty

EN

High quality sol-gel derived ZnO and ZnO: Al thin films were deposited on corning 7059 glass substrate by spin coating technique. The annealed films showed c-axis preferred orientation. The structural electrical and optical properties of the films were investigated as a function of Al concentration from 0 to 3.0 at%. A maximum conductivity of 18.86. omega-1*cm-1 with carrier concentration of 2.2 x 1024 m-3 was found for Al concentration of 0.8 at%. The conductivity is found to be activated type above 375 K and variable range hopping conduction is observed below room temperature. Various transport parameters such as average spacing between donors, effective Bohr radius, donor levels, Debye screening length and average grain size have been estimated. The increase in band gap with Al doping is explained in terms of Burstein Moss shift.

Słowa kluczowe

EN

sol-gel; ZnO; spin coating; transport parameters

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2005
• Tom: Vol. 23, No. 3
• Strony: 685--696
• Opis fizyczny: Bibliogr. 23 poz., rys., tab.

Twórcy

autor

Sagar P.

autor

Kumar M.

autor

Mehra R. M.

• Department of Electronic Science, University of Delhi, South Campus New Delhi, 110021, India,

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