Geometrical and electronic properties of ultra thin epitaxial metal nanowires on flat and vicinal Si surfaces

• Autorzy: Pfnür H. , Zielasek V. , Tegenkamp C. , Block T. , Kallassy Z.
• Konferencja: Workshop on Functional Materials FMA 2004, Athens, Greece, 23-26 September 2005
• Języki publikacji: EN

Abstrakty

EN

The study of metallic low-dimensional nanoscale systems requires the generation of ultra-small structures. We demonstrate the feasibility of the formation of metallic wires of arbitrary shape with a lateral width below 10 nm and a thickness from one to several monolayers using a combination of electron beam lithography in ultra-high vacuum and tunnelling microscopy. These methods can be easily combined with surfaces structured by self-organization. As an example, a system consisting of Pb on Si(557) is discussed. It exhibits quasi one-dimensional conduction properties already with one Pb monolayer, which undergoes a temperature-driven structural phase transition, switching the system between high and low conductance anisotropy.

Słowa kluczowe

EN

low-dimensional nanoscale system; metal epitaxy; nanowires; silver; silicon; electron-beam lithography; tunneling microscopy; surface conductivity

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2005
• Tom: Vol. 23, No. 4
• Strony: 861--876
• Opis fizyczny: Bibliogr. 44 poz., rys.

Twórcy

autor

Pfnür H.

autor

Zielasek V.

autor

Tegenkamp C.

autor

Block T.

autor

Kallassy Z.

• Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, D-30167 Hannover, Germany,

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