Characterization of sol-gel derived Yttrium Doped n-ZnO/p-Si Heterostructure

• Autorzy: Kumar N. , Kaur R. , Mehra R.M.
• Języki publikacji: EN

Abstrakty

EN

This paper reports the experimental and theoretical analysis of current-voltage characteristics of n-ZnO/ p-Si (100) heterostructures. The yttrium doped ZnO films have been deposited on p-Si by sol-gel process using spin coating technique. The structural and electrical properties have been studied as a function of annealing temperature. The experimental data have been analyzed by modifying the current voltage relation predicted by Perlman and Feucht. An estimate of the defect density at the ZnO/Si interface has been made using the Mott-Schottky (C-2-U) plots.

Słowa kluczowe

EN

sol-gel; yttrium-doped ZnO; heterostructure; I-U characteristics; C-U characteristics

PL

zol-żel; charakterystyka prądowo-napięciowa; heterostruktura

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2006
• Tom: Vol. 24, No. 2/1
• Strony: 375--383
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Kumar N.

autor

Kaur R.

autor

Mehra R.M.

• Department of Electronics, Sri Venkateswara College, University of Delhi, New Delhi 110021, India,

Bibliografia

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