Characteristics of quantum beats in InGaN/GaN quantum well

• Autorzy: Gao F. , Xiong G.
• Języki publikacji: EN

Abstrakty

EN

A L-type three level atom in the InGaN/GaN quantum wells is formed by the lowest energy level of conductive electrons and the highest sub-bands of light and heavy hole. With the excitation of the coherent light field, a quantum beat spectrum is obtained. The quantum beat spectrum can be calculated by using the theory of effective mass. Quantum beats do not exist in all polarization directions. The influence of quantum well width and the concentration of In on the spectra of quantum beats is also discussed.

Słowa kluczowe

EN

InGaN/GaN; quantum wells; quantum beats; effective mass

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 4
• Strony: 919--926
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Gao F.

• Department of Physics, Wuhan University, Wuhan 430072, China

autor

Xiong G.

• Department of Physics, Wuhan University, Wuhan 430072, China

Bibliografia

• [1] Tachibana K., Someya T., Ishida S., Arakawa Y., Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature, Applied Physics Letters 76(22), 2000, pp. 3212-4.
• [2] Martinez-Guerrero E., Chabuel F., Daudin B., Rouviere J.L., Mariette H., Control of the morphology transition for the growth of cubic GaN/AlN nanostructures, Applied Physics Letters 81(27), 2002, pp. 5117-9.
• [3] Shen B ., Someya T ., Moriwaki O ., Arakawa Y. , Photoluminescence from two-dimensional electron gas in modulation-doped AljGa1_xN/GaN heterostructures, Physica E: Low-dimensional Systems and Nanostructures 7(3-4), 2000, pp. 939-43.
• [4] JiNGLiANG Liu, Yaochen Bai, Guiguang Xiong, Studies of the second-order nonlinear optical susceptibilities of GaN/AlGaN quantum well, Physica E: Low-dimensional Systems and Nanostructures 23(1-2), 2004, pp. 70-4.
• [5] Fleischhauer M., Keitel C.H., Narducci L.M., Scully M.O., Zhu S.Y., Zubairy M.S., Lasing without inversion: interference of radiatively broadened resonances in dressed atomic systems, Optics Communications 94(6), 1992, pp. 599-608.
• [6] Fernandez-Rossier J., Tejedor C., Merlin R., Exciton beats in GaAs quantum wells: bosonic representation and collective effects, Solid State Communications 112(11), 1999, pp. 597-600.
• [7] Marie X., Amand T., Barran J., Renucci P., Lejeune P., Kalevich V.K., Electron-spin quantum -beat dephasing in quantum wells as a probe of the hole band structure, Physical Review B: Condensed Matter 61(16), 2000, pp. 11065-77.
• [8] Singh M.R., Mukherji D., Quantum beat phenomenon due to polariton in III-V and IV-IV semiconductors doped with quantum dot, Physica E: Low-dimensional Systems and Nanostructures 17(1-4), 2003, pp. 406-9
• [9] Luttinger J.M., Kohn W., Motion of electrons and holes in perturbed periodic fields, Physical Review 97(4), 1955, pp. 869-83.
• [10] Luttinger J.M., Quantum theory of cyclotron resonance in semiconductors: general theory, Physical Review 102(4), 1956, pp. 1030-41.
• [11] Gao F., Xiong G., Parameter-dependent resonant third-order susceptibility contributed by inter-band transitions in InxGaj_xN/GaN quantum wells, Physica E: Low-dimensional Systems and Nanostructures 28(4), 2005, pp. 412-8.
• [12] Shen Y.R., The Principles of Nonlinear Optics, Wiley, New York 1984.
• [13] Takahashi Y., Kawaguchi H., Polarization-dependent gain saturations in quantum-well lasers, IEEE Journal of Quantum Electronics 36(7), 2000, pp. 864-71.