Femtosecond laser-induced damage in dielectrics

• Autorzy: Peng Y. , Wei Y. , Lv Z.
• Języki publikacji: EN

Abstrakty

EN

We present a new method to investigate the ablation phenomenon by a 100 fs, 1053 nm Gaussian laser pulse in fused silica and describe the different mechanisms of ablation in long pulse and ultrashort pulse lasers. A modified rate equation is used to numerically calculate damage in dielectrics. In addition, we examine the respective role of ionization and avalanche ionization in femtosecond laser-induced damage. We find that present results are in quantitative agreement with those of earlier study.

Słowa kluczowe

EN

femtosecond laser; ablation mechanism; damage threshold; electron number density

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2004
• Tom: Vol. 34, nr 3
• Strony: 319--329
• Opis fizyczny: Bibliogr. 26 poz., rys.

Twórcy

autor

Peng Y.

• College of Physics and Information Engineering, Henan Normal University, Xinxiang, 453007, People’s Republic of China

autor

Wei Y.

• College of Physics and Information Engineering, Henan Normal University, Xinxiang, 453007, People’s Republic of China

autor

Lv Z.

• College of Physics and Information Engineering, Henan Normal University, Xinxiang, 453007, People’s Republic of China

Bibliografia

• [1] STUART B.C., FEIT M.D., RUBENCHIK A.M., SHORE B.W., PERRY M.D., Phys. Rev. Lett. 74 (1995), 2248; J. Opt. Soc. Am. B 13 (1996), 459.
• [2] VAREL H., ASHKENASI D., ROSENFELD A., HERRMANN R., NOACK F., CAMPBELL E.E.B., Appl. Phys. A62 (1996), 293.
• [3] DU D., LIU X., MOUROU G., Appl. Phys. B 63 (1996), 617.
• [4] LENZNER M., KRÜGER J., SARTANIA S., CHENG Z., SPIELMANN CH., MOUROU G., KAUTEK W., KRAUSZF., Phys. Rev. Lett. 80 (1998), 4076.
• [5] STUART B.C., FEIT M.D., HERMAN S., RUBENCHIK A.M., SHORE B.W., PERRY M.D., Phys. Rev. B 53 (1996), 1749.
• [6] STRICKLAND D., MOUROU G., Opt. Commun. 56 (1985), 219.
• [7] CHING-HUA FAN, JON P. LONGTIN, Appl. Opt. 40 (2001), 3124.
• [8] KELDYSH L.V., Sov. Phys. JETP 20 (1965), 1307.
• [9] MING LI, SAIPRIYA MENON, JOHN P. NIBARGER, GEORGE N. GIBSON, Phys. Rev. Lett. 82 (1999), 2394.
• [10] SCHAFFER C.B., BRODEUR A., MAZUR E., Meas. Sci. Technol. 12 (2001), 1784.
• [11] PERRY M.D., STUART B.C., BANKS P.S., FEIT M.D., YANOVSKY V., RUBENCHIK A.M., J. Appl. Phys. 85 (1999), 6803.
• [12] NOACK J., VOGLE A., IEEE J. Quantum Electron. 35 (1999), 1156.
• [13] KENNEDY P.K., HAMMER D.X., ROCKWELL B.A., Prog. Quantum Electron. 21 (1997), 155.
• [14] AN-CHUN TIEN, STERLING BACKUS, HENRY KAPTEYN, MARGARET MURNANE, GERARD MOUROU, Phys. Rev. Lett. 82 (1999), 3883.
• [15] YEOM K., JIANG H., SINGH J., J. Appl. Phys. 81 (1997), 1807.
• [16] ARNOLD D., CARTIER E., Phys. Rev. B. 46 (1992), 15102.
• [17] ARNOLD D., CARTIER E., DIMARIA D.J., Phys. Rev. B. 49 (1994), 10278.
• [18] THORNBER K.K., J. Appl. Phys. 52 (1981), 279.
• [19] DU D., LIU X., KORN G., SQUIER J., MOUROU G., Appl. Phys. Lett. 64 (1994), 3071.
• [20] KENNEDY P.K., IEEE J. Quantum Electron. 31 (1995), 2241.
• [21] DOCCHIO F., Europhys. Lett. 6 (1998), 407.
• [22] FAN C.H., SUN J., LONGTIN J.P., J. Appl. Phys. 91 (2002), 2530.
• [23] NIEMZ M.H., Appl. Phys. Lett. 66 (1995), 1181.
• [24] BLOEMBERGEN N., IEEE J. Quantum Electron. QE-10 (1974), 375.
• [25] JIA T.Q., LI R.X., LIU Z., CHEN H., XU Z.Z., Appl. Surf. Sci. 189 (2002), 78.
• [26] GAMALY E.G., RODE A.V., LUTHER-DAVIES B., Phys. Plasmas. 9 (2002), 949.