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Structural, optical and electrical characterization of Co-Pd doped TiO2 semiconducting thin films sputtered on silicon

Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The fundamental structural, electrical and optical properties of junction-based devices composed of semiconducting thin films of metal oxide on a semiconductor were examined. Thin films were deposited on silicon and silica substrates by hot target reactive magnetron sputtering process. During the deposition base TiO2 films were doped with Co, Pd transition metals. Electrical and optical beam induced current (OBIC) analysis confirmed the formation of a junction based on a semiconduting thin film of metal oxide–semiconductor interface
Czasopismo
Rocznik
Strony
661--668
Opis fizyczny
Bibliogr. 16 poz., rys.
Twórcy
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland
autor
  • Electrotechnical Institute, ul. Marii Sklodowskiej-Curie 55-61, 50-369 Wroclaw, Poland
Bibliografia
  • [1] Pal M., Tsujigami Y., Yoshikado A., Sakata H., Phys. Status Solidi 182 (2000), 727.
  • [2] Król R., Tuller H.L., Solid State Ionics 150 (2002), 167.
  • [3] Hosegawa S., Kitagawa Y., Solid State Commun. 27 (1978), 855.
  • [4] Li G.H., Yang L., Jin Y.X., Zhang L.D., Thin Solid Films 368 (2000), 163.
  • [5] Poznyak S.K., Talapin D.V., Kulak A.I., Thin Solid Films 405 (2002), 35.
  • [6] Domaradzki J., Prociow E., Kaczmarek D., Proc. IV Int. Conf. ASDAM’02, Smolenice Castle, Slovakia 2002, p. 47 (published by IEEE , Piscataway, NJ, USA).
  • [7] Ray S.C., Sol. Energy Mater. Sol. Cells 68 (2001), 307.
  • [8] Won D.J., Wang C.H., Jang H.K., Choi D.J., Appl. Phys. A 73 (2001), 595.
  • [9] Posadowski W.M., Thin Solid Films 343-344 (1999), 85.
  • [10] Posadowski W.M., Vacuum 53 (1999), 11.
  • [11] Prociow E., Domaradzki J., Kaczmarek D., Proc. IV Intern. Conf. ASDAM’02, IEEE, (2002), 51.
  • [12] Klug H., Alexander L., X-ray Diffraction Procedures, Wiley, NewYork 1974, p. 635.
  • [13] Mielcarek W., Prociow K, Proc. of 38-th International Conference on Microelectronic Devices and Material, MIDEM 2002, Slovenia, (2002), 157.
  • [14] Bao D., Wu X., Zhang L., Yao X., Thin Solid Films 350 (1999), 30.
  • [15] Matsumoto Y., Murakami M., Shono T., Hasegawa T., Fukumura T., Kawasaki M., Ahmed P., Chikyow T., Koshihara S., Koinuma H., Science 291 (2001), 854.
  • [16] Oliva F.Y., Avalle L.B., Santos E., Camara O.R., J. Photochem. Photobio., A Chem. 146 (2002), 175.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW1-0014-0051
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