Computer modelling of devices based on AlGaN/GaN heterostructure

• Autorzy: Kośnikowski W. , Piasecki T.
• Języki publikacji: EN

Abstrakty

EN

Computer simulation of AlGaN/GaN heterostructure heterostructure field effect transitior (HFET) and metal–semiconductor–metal (MSM) photodetector has been performed. The influence of AlGaN layer thickness and background electron concentration, as well as piezoelectric effect, on devices’ parameters has been investigated. The results confirm the great importance of keeping low background electron concentration. The superiority of devices with AlGaN layer applied is shown. Thickness of AlGaN layer is not an important factor.

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 485--491
• Opis fizyczny: bibliogr. 3 poz.

Twórcy

autor

Kośnikowski W.

autor

Piasecki T.

• The Faculty of Microsystems Electronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław