Transistors today - after 50 years in microelectronics

• Autorzy: Boratyński B.
• Języki publikacji: EN

Abstrakty

EN

The current status and future trends in bipolar junction transistors (BJT) and field effect transistors (FET) construction design, technology and applications are presented. The development of heterojunction bipolar transistor (HBT) and high electron mobility transistor (HEMT) devices which find a widespread use in communication and optoelectronic circuits has been closely tied with advances in epitaxial growth of semiconductor nanolayers and the so-called bandgap engineering. Application of new semiconductor materials such as SiGe, AlInAs, GaN, AlGaN in traditional devices allows improving substantially their parameters. The comparison of the performance of advanced devices is given. Research results on advanced GaN HFET (heterostructure field effect transistor) devices fabricated in our semiconductor device laboratory are presented. Future trends in the device design market are signalised

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 437--447
• Opis fizyczny: bibliogr. 24 poz.

Twórcy

autor

Boratyński B.

• The Faculty of Microsystems Electronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław