Defect structure changes in thin layers of semiconductors annealed under hydrostatic pressure

• Autorzy: Bąk-Misiuk J. , Misiuk A. , Domagała J.
• Języki publikacji: EN

Abstrakty

EN

The effect of annealing under enhanced hydrostatic argon pressure (1.2 GPa) on the defect structure of thin GaAs:Be, InAs and AlGaAs and on the layers grown on GaAs substrates was investigated by X-ray diffraction methods. The strain state of the homoepitaxial GaAs:Be layers remained unchanged after the high pressure–high temperature (HP–HT) treatment, but additional defects were created on primarily existing structural irregularities. The treatment of AIIIBV heterostructures resulted in the changed strain state and dislocation density, which are dependent on the bulk modulus of the layer and substrate materials.

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 319--325
• Opis fizyczny: bibliogr. 12 poz.

Twórcy

autor

Bąk-Misiuk J.

autor

Misiuk A.

autor

Domagała J.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa