Growth of the optical layers in a stochastic simulation. Study of a film morphology

• Autorzy: Oleszkiewicz W. , Romiszowski P.
• Języki publikacji: EN

Abstrakty

EN

A Monte Carlo simulation model of the ion-beam assisted deposition (IBAD) process was used to investigate the influence of some process parameters on the final quality of thin films. The simulations were performed on a simple cubic lattice on which the particles were located. The results show that the angle of ion beam incidence, as well as the kinetic energy of particles, ion-to-atom arrival ratio (IAR) and the roughness of the substrate play an important role in the quality of the obtained films. The influence of the deposition process parameters on the morphology of the films was also discussed

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 259--265
• Opis fizyczny: bibliogr. 13 poz.

Twórcy

autor

Oleszkiewicz W.

autor

Romiszowski P.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław