Ordering of the vicinal Si(15 1 0) surface at low Au coverage

• Autorzy: Mazurek P. , Jałochowski M.
• Języki publikacji: EN

Abstrakty

EN

Reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) are used to investigate the ordering process of vicinal silicon surface. A vicinal Si(15 1 0) sample was cut from a Si(001) monocrystal and oriented by X-ray diffractometry techniques. At Au coverage within 1–2 ML and after the subsequent annealing at about 1000 K in UHV conditions this surface exhibits a rectangular imbricate step/terrace structure. The best surface ordering was found at 1.5–2 ML Au coverage where flat Si(001) terraces show 5×3.2 surface reconstruction. The edges of these rectangular terraces are parallel to the [011] and [011] direction. Due to high density of corners formed by the rectangular terraces, this surface may be suitable for nucleation of quasi zero-dimensional structures.

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 247--252
• Opis fizyczny: bibliogr. 10 poz.

Twórcy

autor

Mazurek P.

autor

Jałochowski M.

• Department of Experimental Physics, Maria Curie-Skłodowska University, pl.Marii Curie-Skłodowskiej 1, 20-031 Lublin