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The surface state density distributions NSS(E) on the InP surface were determined by employing a rigorous computer analysis of the dependences of the band-to-band photoluminescence efficiency YPL versus excitation light intensity F. Experimental YPL–F spectra, taken from the literature, were obtained for the n-InP (100) surface after chemical polishing and ion bombardment. Theoretical Y PL–F curves were calculated using a numerical simulator which takes into account all bulk and surface recombination processes. The NSS(E) distributions were determined for both surfaces from the best fit to experimental data by applying a procedure based on genetic algorithm. An increase in NSS(E) after ion bombardment was attributed to the surface disordering. The behaviour of the effective surface recombination velocity and quasi-Fermi levels for electrons and for holes versus F was also analysed.
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226--233
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bibliogr. 27 poz.
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- Department of Microelectronics, Institute of Physics, Silesian University of Technology, ul. Bolesława Krzywoustego 2, 44-100 Gliwice
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bwmeta1.element.baztech-article-BPW1-0013-0040