Simulation of thermal properties of proton-implanted top-surface-emitting lasers. II. Results and discussion

• Autorzy: Nakwaski W. , Maćkowiak P. , Osiński M.
• Języki publikacji: EN

Abstrakty

EN

For part I see, ibid., vol. 32, p. 157, 2002. The comprehensive analytical thermal model of proton-implanted top-surface-emitting lasers (PITSELs) presented in the first part of the paper is applied to study thermal characteristics of GaAs/AlGaAs/AlAs devices with the active diameter of 35 mu m. In the model, both the voltage saturation above the lasing threshold and the temperature increase in the laser heat sink are taken into account. Our results show that intense heating occurs at high pumping currents which is followed by a distinct thermal waveguiding effect within the central part of laser active regions. Long tails of radial temperature distributions, on the other hand, will result in severe thermal crosstalk if integration of these devices into densely packed two-dimensional arrays were to be attempted. Minimization of electrical series resistance is shown to be very important for improving the device performance.

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 1-2
• Strony: 173--185
• Opis fizyczny: bibliogr. 35 poz.

Twórcy

autor

Nakwaski W.

autor

Maćkowiak P.

autor

Osiński M.

• Institute of Physics, Technical University of Łódź, ul. Wólczańska 219, 93-005 Łódź