Optical dispersion characterization of sprayed Zn1-xMnxO thin films

• Autorzy: Habubi N.F. , Chiad S.S. , Oboudi S.F. , Toma Z.A.
• Języki publikacji: EN

Abstrakty

EN

Uniform and adherent Zn1-xMnxO films have been deposited by using spray pyrolysis technique on glass substrates. The optical properties and dispersion parameters of zinc oxide have been studied as a function of doping concentration with Mn. Changes in direct optical energy band gap of cobalt oxide films were confirmed after doping, The optical energy gap Eg increased from 3.13 eV for the undoped ZnO to 3.39 eV with increasing the doping concentration of Mn to 4%. The changes in dispersion parameters and Urbach tails were investigated. An increase in the doping concentration causes a decrease in the average oscillator strength. The single-oscillator parameter has been reported.

Słowa kluczowe

EN

TCOs; Dispersion parameters; spray pyrolysis; zinc oxide; Zn1-xMnxO

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2013
• Tom: Vol. 4
• Strony: 1--8
• Opis fizyczny: Bibliogr. 25 poz., rys., tab.

Twórcy

autor

Habubi N.F.

autor

Chiad S.S.

autor

Oboudi S.F.

autor

Toma Z.A.

• 1Physics Department, College of Education, Al-Mustansiriyah University, Baghdad, Iraq,

Bibliografia

• [1] S. J. Pearson, D. P. N. Orton, K. I., Y. W. Hoe, T. Steiner, Prog. Mat. Sci. 50 (2005) 293-378.
• [2] Y. Sato, M. Yodogawa, T. Yamamoto, N. Shibata, Y. Ikuhara, Appl. Phys. Lett. 86 (2005) 152112.
• [3] P. D. Batista, M. Mulato, Appl. Phys. Lett. 87 (2005) 143508.
• [4] Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, K. W. Cheah, Appl. Phys. Lett. 92 (2008) 113505.
• [5] E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, R. F. P. Martins, L. M. N. Pereira, Appl. Phys. Lett. 85 (2004) 2541.
• [6] Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, Y. S. Park, C. J. Youn, Appl. Phys. Lett. 87 (2005) 153504.
• [7] B. J. Lawrie, R. F. Haglund Jr., R. Mu, Optics Express 17 (2009) 2565-2572.
• [8] E. M. Bachari, G. Baud, S. B. Amor, M. Jacquet, Thin Solid Films 348 (1999) 165-172.
• [9] Z. F. Wu, X. M. Wu, L. J. Zhuge, B. Hong, X. M. Yang, T. Yu, J. J. He, Q. Chen, Applied Surface Science 256 (2010) 2259-2262.
• [10] Huan Pang, Feng Gao, Qun Chen, Rongmei Liu, Qingyi Lu, Dalton Trans. 41 (2012) 5862-5868.
• [11] Zheng-bin Gu, Ming-hui Lu, Jing Wang, Chao-ling Du, Chang-Sheng Yuan, Di Wu, Shan-tao Zhang, Yong-Yuan Zhu, Shi-ning Zhu, Yan-feng Chen, Thin Solid Films 515 (2006) 2361-2365.
• [12] S. K. Mandal, T. K. Nath, Thin Solid Films 515 (2006) 2535-2541.
• [13] J. C. Pivin, G. Socol, I. Mihailescu, P. Berthet, F. Singh, M. K. Patel, L. Vincent, Thin Solid Films 517 (2008) 916-922.
• [14] J. Alaria, P. Turek, M. Bernard, M. Bouloudenine, A. Berbadj, N. Brihi, Chemical Physics Letters 415 (2005) 337-341.
• [15] Kenji Yoshino, Satoshi Oyamaa, Minoru Yoneta, Tomoyasu Taniyama, Materials Science and Engineering B 148 (2008) 234-236.
• [16] L. Rajamohan Reddy, P. Prathap, Y. P. Venkata Subbaiah, K. T. Ramakrishna Reddy, J. Yi, Solid State Sciences 9 (2007) 718-721.
• [17] S. Ilican, Y. Caglar, M. Caglar, Journal of Optoelectronics and Advanced Materials 10 (2008) 2578-2583.
• [18] T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys. Lett. 75 (1999) 3366.
• [19] Urbach F., Phys. Rev. 92(5) (1953) 1324.
• [20] J. Tauc, Amorphous and Liquid Semiconductors, Plenum Press, New York, 1974.
• [21] J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15 (1966) 627-637.
• [22] Wemple S. H., DiDomenico, J. Appl. Phys. 40 (2) (1969) 720-734.
• [23] Wemple S. H., DiDomenico, Phys. Rev. B3 (1971) 1338-1351.
• [24] Wemple S. H., Phys. Rev. B7 (1973) 3767-3777.
• [25] Atyia H. E., Optoelectron. Adv. M., 8 (2006) 1359-1366.